BC847PN Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – NPN/PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

BC847PN
BC847PN
NPN
PNP
Complementary Surface Mount General Purpose Si-Planar Transistors
Komplementäre Si-Planar Transistoren für die Oberflächenmontage
Version 2006-09-05
2^±0.1
2 x 0.65
654
0.9^±0.1
Type
Code
123
2.4
Dimensions - Maße [mm]
6 = C1 5 = B2 4 = E2
1 = E1 2 = B1 3 = C2
Power dissipation
Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
NPN
PNP
300 mW
SOT-363
0.01 g
Maximum ratings (TA = 25°C)
per transistor – pro Transistor
Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCBO
Collector-Base-voltage – Kollektor-Basis-Spannung E open VCEO
Emitter-Base-voltage – Emitter-Basis-Spannung
C open
VEB0
Power dissipation – Verlustleistung
Ptot
Collector current – Kollektorstrom (dc)
IC
Peak Collector current – Kollektor-Spitzenstrom
ICM
Peak Base current – Basis-Spitzenstrom
IBM
Junction temperature – Sperrschichttemperatur
Tj
Storage temperature – Lagerungstemperatur
TS
Grenzwerte (TA = 25°C)
BC847PN
45 V
50 V
6V
300 mW ¹)
100 mA
200 mA
200 mA
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis
VCE = 5 V, IC = 2 mA
T1 - NPN
hFE
- VCE = 5 V, - IC = 2 mA
T2 - PNP
hFE
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung ²)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
T1 - NPN
VCEsat
VCEsat
- IC = 10 mA, - IB = 0.5 mA
- IC = 100 mA, - IB = 5 mA
T2 - PNP
- VCEsat
- VCEsat
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
200
–
450
220
–
475
–
–
250 mV
–
–
600 mV
–
–
300 mV
–
–
650 mV
1 Mounted on P.C. board with 3 mm² copper pad at each terminal
Montage auf Leiterplatte mit 3 mm² Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
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