BC807W Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP general purpose transistor

BC 807W / BC 808W
General Purpose Transistors
PNP
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
PNP
2^±0.1
0.3
3
Type
Code
1
2
1.3
1^±0.1
Dimensions / Maße in mm
1=B 2=E 3=C
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
225 mW
SOT-323
0.01 g
Maximum ratings (T_A = 25/C)
Collector-Emitter-voltage
B open
Collector-Emitter-voltage
B shorted
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
Peak Coll. current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
- V_CE0
- V_CES
- V_CB0
- V_EB0
P_tot
- I_C
- I_CM
- I_BM
I_EM
T_j
T_S
Grenzwerte (T_A = 25/C)
BC 807W
BC 808W
45 V
25 V
50 V
30 V
50 V
30 V
5V
225 mW ¹)
500 mA
1000 mA
200 mA
1000 mA
150/C
- 65…+ 150/C
Characteristics, T_j = 25/C
DC current gain – Kollektor-Basis-Stromverhältnis
- V_CE = 1 V, - I_C = 100 mA
- V_CE = 1 V, - I_C = 500 mA
- V_CE = 1 V, - I_C = 100 mA
BC807W
h_FE
BC808W
h_FE
Group -16W h_FE
Group -25W h_FE
Group -40W h_FE
Min.
Kennwerte, T_j = 25/C
Typ.
Max.
100
–
600
40
–
–
100
160
250
160
250
400
250
400
600
1_{) Mounted on P.C. board with 3 mm}2 _{copper pad at each terminal}
Montage auf Leiterplatte mit 3 mm² Kupferbelag (Lötpad) an jedem Anschluß
4
01.11.2003