BC556_07 Datasheet, PDF (1/2 Pages) Diotec Semiconductor – General Purpose Si-Epitaxial PlanarTransistors

BC556 ... BC559
BC556 ... BC559
PNP
General Purpose Si-Epitaxial PlanarTransistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
Version 2006-05-31
Power dissipation – Verlustleistung
Plastic case
CBE
Kunststoffgehäuse
Weight approx. – Gewicht ca.
2 x 2.54
Dimensions - Maße [mm]
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
PNP
500 mW
TO-92
(10D3)
0.18 g
Maximum ratings (TA = 25°C)
Collector-Emitter-voltage
E-B short
Collector-Emitter-voltage
B open
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
- VCES
- VCEO
- VCBO
- VEB0
Ptot
- IC
- ICM
- IBM
IEM
Tj
TS
BC556
80 V
65 V
80 V
Grenzwerte (TA = 25°C)
BC557 BC558/559
50 V
30 V
45 V
30 V
50 V
30 V
5V
500 mW ¹)
100 mA
200 mA
200 mA
200 mA
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis ²)
- VCE = 5 V, - IC = 10 µA
hFE
- VCE = 5 V, - IC = 2 mA
hFE
- VCE = 5 V, - IC = 100 mA
hFE
h-Parameters at/bei - VCE = 5 V, - IC = 2 mA, f = 1 kHz
Small signal current gain
Kleinsignal-Stromverstärkung
hfe
Input impedance – Eingangs-Impedanz
hie
Output admittance – Ausgangs-Leitwert
hoe
Reverse voltage transfer ratio
Spannungsrückwirkung
hre
Group A
Kennwerte (Tj = 25°C)
Group B
Group C
typ. 90
110 ... 220
typ. 120
typ. 150
200 ... 450
typ. 200
typ. 270
420 ... 800
typ. 400
typ. 220
typ. 330
typ. 600
1.6 ... 4.5 kΩ 3.2 ...8.5 kΩ 6 ... 15 kΩ
18 < 30 µS 30 < 60 µS 60 < 110 µS
typ. 1.5*10-4 typ. 2*10-4 typ. 3*10-4
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1