BC556XBK Datasheet, PDF (1/2 Pages) Diotec Semiconductor – General Purpose Si-Epitaxial PlanarTransistors

BC556xBK ... BC559xBK
BC556xBK ... BC559xBK
PNP
General Purpose Si-Epitaxial PlanarTransistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
Version 2009-12-07
4.6^±0.1
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
CBE
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
2 x 1.27
Dimensions - Maße [mm]
Special packaging bulk
Sonder-Lieferform Schüttgut
PNP
500 mW
TO-92
(10D3)
0.18 g
Maximum ratings (TA = 25°C)
Collector-Emitter-voltage
E-B short
Collector-Emitter-voltage
B open
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
- VCES
- VCEO
- VCBO
- VEB0
Ptot
- IC
- ICM
- IBM
IEM
Tj
TS
BC556
80 V
65 V
80 V
Grenzwerte (TA = 25°C)
BC557 BC558/559
50 V
30 V
45 V
30 V
50 V
30 V
5V
500 mW ¹)
100 mA
200 mA
200 mA
200 mA
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis ²)
- VCE = 5 V, - IC = 10 µA
hFE
- VCE = 5 V, - IC = 2 mA
hFE
- VCE = 5 V, - IC = 100 mA
hFE
h-Parameters at/bei - VCE = 5 V, - IC = 2 mA, f = 1 kHz
Small signal current gain
Kleinsignal-Stromverstärkung
hfe
Input impedance – Eingangs-Impedanz
hie
Output admittance – Ausgangs-Leitwert
hoe
Reverse voltage transfer ratio
Spannungsrückwirkung
hre
Group A
Kennwerte (Tj = 25°C)
Group B
Group C
typ. 90
110 ... 220
typ. 120
typ. 150
200 ... 450
typ. 200
typ. 270
420 ... 800
typ. 400
typ. 220
typ. 330
typ. 600
1.6 ... 4.5 kΩ
18 < 30 µS
3.2 ...8.5 kΩ
30 < 60 µS
6 ... 15 kΩ
60 < 110 µS
typ. 1.5*10-4 typ. 2*10-4 typ. 3*10-4
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
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