BC556 Datasheet, PDF (1/2 Pages) Motorola, Inc – Amplifier Transistors

BC 556 ... BC 559
PNP
Standard Pinning
1=C 2=B 3=E
General Purpose Transistors
Si-Epitaxial PlanarTransistors
PNP
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
500 mW
TO-92
(10D3)
0.18 g
Maximum ratings (T_A = 25/C)
Collector-Emitter-voltage
B open
Collector-Base-voltage
E open
Emitter-Base-voltage
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (DC)
Junction temp. – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
- V_CE0
- V_CB0
- V_EB0
P_tot
- I_C
T_j
T_S
BC 556
65 V
80 V
Grenzwerte (T_A = 25/C)
BC 557 BC 558/559
45 V
30 V
50 V
30 V
5V
500 mW ¹)
100 mA
150/C
- 55…+ 150/C
Characteristics (T_j = 25/C)
DC current gain – Kollektor-Basis-Stromverhältnis
- V_CE = 5 V, - I_C = 2 mA
h_FE
h-Parameters at - V_CE = 5V, - I_C = 2 mA, f = 1 kHz
Small signal current gain
Stromverstärkung
h_fe
Input impedance – Eingangsimpedanz
h_ie
Output admittance – Ausg.-Leitwert
h_oe
Reverse voltage transfer ratio
Spannungsrückwirkung
h_re
Collector saturation voltage – Kollektor-Sättigungsspg.
- I_C = 100 mA, - I_B = 5 mA
-V_CEsat
Group A
110...220
typ. 220
1.6...4.5 kS
18 < 30 :S
typ.1.5 *10^-4
–
Kennwerte (T_j = 25/C)
Group B
Group C
200...460
420...800
typ. 330
typ. 600
3.2...8.5 kS 6...15 kS
30 < 60 :S 60 < 110 :S
typ. 2 *10^-4 typ. 3 *10^-4
–
300 mV
1_{) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case}
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
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01.11.2003