BC546_07 Datasheet, PDF (1/2 Pages) Diotec Semiconductor – General Purpose Si-Epitaxial Planar Transistors

BC546 ... BC549
BC546 ... BC549
NPN
General Purpose Si-Epitaxial Planar Transistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
Version 2006-05-31
Power dissipation – Verlustleistung
Plastic case
CBE
Kunststoffgehäuse
Weight approx. – Gewicht ca.
2 x 2.54
Dimensions - Maße [mm]
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
NPN
500 mW
TO-92
(10D3)
0.18 g
Maximum ratings (TA = 25°C)
Collector-Emitter-voltage
E-B short VCES
Collector-Emitter-voltage
B open
VCEO
Collector-Base-voltage
E open
VCBO
Emitter-Base-voltage
C open
VEB0
Power dissipation – Verlustleistung
Ptot
Collector current – Kollektorstrom (dc)
IC
Peak Collector current – Kollektor-Spitzenstrom
ICM
Peak Base current – Basis-Spitzenstrom
IBM
Peak Emitter current – Emitter-Spitzenstrom
- IEM
Junction temperature – Sperrschichttemperatur
Tj
Storage temperature – Lagerungstemperatur
TS
BC546
85 V
65 V
80 V
Grenzwerte (TA = 25°C)
BC547 BC548/549
50 V
30 V
45 V
30 V
50 V
30 V
5V
500 mW ¹)
100 mA
200 mA
200 mA
200 mA
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis ²)
VCE = 5 V, IC = 10 µA
hFE
VCE = 5 V, IC = 2 mA
hFE
VCE = 5 V, IC = 100 mA
hFE
h-Parameters at/bei VCE = 5 V, IC = 2 mA, f = 1 kHz
Small signal current gain
Kleinsignal-Stromverstärkung
hfe
Input impedance – Eingangs-Impedanz
hie
Output admittance – Ausgangs-Leitwert
hoe
Reverser voltage transfer ratio
Spannungsrückwirkung
hre
Group A
Kennwerte (Tj = 25°C)
Group B
Group C
typ. 90
110 ... 220
typ. 120
typ. 150
200 ... 450
typ. 200
typ. 270
420 ... 800
typ. 400
typ. 220
typ. 330
typ. 600
1.6 ... 4.5 kΩ 3.2 ...8.5 kΩ 6 ... 15 kΩ
18 < 30 µS 30 < 60 µS 60 < 110 µS
typ. 1.5*10^-4 typ. 2*10^-4
typ. 3*10^-4
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
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