BC546 Datasheet, PDF (1/2 Pages) Motorola, Inc – Amplifier Transistors

BC 546 ... BC 549
NPN
Standard Pinning
1=C 2=B 3=E
General Purpose Transistors
Si-Epitaxial PlanarTransistors
NPN
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
500 mW
TO-92
(10D3)
0.18 g
Maximum ratings (T_A = 25/C)
Collector-Emitter-voltage
B open
V_CE0
Collector-Emitter-voltage
B shorted V_CES
Collector-Base-voltage
E open
V_CB0
Emitter-Base-voltage
C open
V_EB0
Power dissipation – Verlustleistung
P_tot
Collector current – Kollektorstrom (DC)
I_C
Peak Coll. current – Kollektor-Spitzenstrom
I_CM
Peak Base current – Basis-Spitzenstrom
I_BM
Peak Emitter current – Emitter-Spitzenstrom
- I_EM
Junction temp. – Sperrschichttemperatur
T_j
Storage temperature – Lagerungstemperatur
T_S
BC 546
65 V
85 V
80 V
6V
Grenzwerte (T_A = 25/C)
BC 547 BC 548/549
45 V
30 V
50 V
30 V
50 V
30 V
6V
5V
500 mW ¹)
100 mA
200 mA
200 mA
200 mA
150/C
- 65…+ 150/C
Characteristics, T_j = 25/C
DC current gain – Kollektor-Basis-Stromverhältnis
V_CE = 5 V, I_C = 10 :A
h_FE
V_CE = 5 V, I_C = 2 mA
h_FE
V_CE = 5 V, I_C = 100 mA
h_FE
h-Parameters at V_CE = 5V, I_C = 2 mA, f = 1 kHz
Small signal current gain – Stromverst.
h_fe
Input impedance – Eingangsimpedanz
h_ie
Output admittance – Ausgangsleitwert
h_oe
Reverse voltage transfer ratio
Spannungsrückwirkung
h_re
Group A
Kennwerte, T_j = 25/C
Group B
Group C
typ. 90
110...220
typ. 120
typ. 150
200...450
typ. 200
typ. 270
420...800
typ.400
typ. 220
1.6...4.5 kS
18 < 30 :S
typ.1.5 *10^-4
typ. 330
3.2...8.5 kS
30 < 60 :S
typ. 2 *10^-4
typ. 600
6...15 kS
60 < 110 :S
typ. 3 *10^-4
1_{) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case}
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
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01.11.2003