BAV99 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

BAV99
Small Signal Si-Diodes
Surface mount Small Signal Double-Diodes
Kleinsignal-Doppel-Dioden für die Oberflächenmontage
Version 2004-04-05
Power dissipation – Verlustleistung
2.9 ^±0.1
1.1
0.4
3
Type
Code
1
2
1.9
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Dimensions / Maße in mm
1 = A1 2 = K1/A2 3 = K2
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
310 mW
70 V
SOT-23
(TO-236)
0.01 g
Maximum ratings (T_A = 25°C)
per diode / pro Diode
Max. average forward current (dc)
Dauergrenzstrom
I_FAV
Repetitive peak forward current
Periodischer Spitzenstrom
I_FRM
Peak forward surge current
Stoßstrom-Grenzwert
t_p ≤ 1 s
I_FSM
t_p ≤ 1 ms
I_FSM
t_p ≤ 1 µs
I_FSM
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
V_RRM
Junction temperature – Sperrschichttemperatur
T_j
Storage temperature – Lagerungstemperatur
T_S
Grenzwerte (T_A = 25°C)
BAV99
200 mA ¹)
300 mA ¹)
0.5 A
1A
2A
70 V
150°C
- 55…+ 150°C
Characteristics (T_j = 25°C)
Kennwerte (T_j = 25°C)
Forward voltage - Durchlaßspannung ²)
I_F = 1 mA
V_F
I_F = 10 mA V_F
I_F = 50 mA V_F
I_F = 150 mA V_F
< 715 mV
< 855 mV
<1V
< 1.25 V
Leakage current - Sperrstrom ²)
V_R = 25 V
V_R = 70 V
T_j = 25°C
I_R
I_R
< 30 nA
2.5 µA
V_R = 25 V
V_R = 70 V
T_j = 150°C
I_R
I_R
< 30 µA
< 50 µA
1_{) Mounted on P.C. board with 25 mm}2 _{copper pads at each terminal}
Montage auf Leiterplatte mit 25 mm² Kupferbelag (Lötpad) an jedem Anschluß
2_{) Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%}
1