2N7000 Datasheet, PDF (1/2 Pages) Motorola, Inc – CASE 29-04, STYLE 22 TO-92 (TO-226AA)

2N7000
2N7000
N
N-Channel Enhancement Mode Field Effect Transistor
N-Kanal Feldeffekt Transistor – Anreicherungstyp
Version 2011-02-16
Power dissipation
Verlustleistung
S GD
Plastic case
Kunststoffgehäuse
Weight approx.
Gewicht ca.
2 x 2.54
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions - Maße [mm]
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
N
350 mW
TO-92
(10D3)
0.18 g
Maximum ratings (TA = 25°C)
Drain-Source-voltage – Drain-Source-Spannung
VDSS
Drain-Gate-voltage – Drain-Gate-Spannung
RGS ≤ 1 MΩ
VDGR
Gate-Source-voltage – Gate-Source-Spannung
dc
tp < 50 µs
VGSS
VGSS
Power dissipation – Verlustleistung
Ptot
Drain current continuos – Drainstrom (dc)
ID
Peak Drain current – Drain-Spitzenstrom
IDM
Operating Junction temperature – Sperrschichttemperatur
Tj
Storage temperature – Lagerungstemperatur
TS
Grenzwerte (TA = 25°C)
2N7000
60 V
60 V
± 20 V
± 40 V
350 mW
200 mA
500 mA
150°C
-55…+150°C
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