2N3903 Datasheet, PDF (1/2 Pages) ON Semiconductor – General Purpose Transistors(NPN Silicon)

2N3903, 2N3904
NPN
Version 2004-01-20
Standard Pinning
1=C 2=B 3=E
Si-Epitaxial PlanarTransistors
Switching Transistors
NPN
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
625 mW
TO-92
(10D3)
0.18 g
Maximum ratings (T_A = 25/C)
Collector-Emitter-voltage
B open V_CE0
Collector-Base-voltage
E open V_CE0
Emitter-Base-voltage
C open V_EB0
Power dissipation – Verlustleistung
P_tot
Collector current – Kollektorstrom (dc)
I_C
Junction temp. – Sperrschichttemperatur
T_j
Storage temperature – Lagerungstemperatur
T_S
Grenzwerte (T_A = 25/C)
2N3903, 2N3904
40 V
60 V
6V
625 mW ¹)
600 mA
150/C
- 55…+ 150/C
Characteristics (T_j = 25/C)
Collector saturation volt. – Kollektor-Sättigungsspannung
I_C = 10 mA, I_B = 1 mA
I_C = 50 mA, I_B = 5 mA
V_CEsat
V_CEsat
Base saturation voltage – Basis-Sättigungsspannung
I_C = 10 mA, I_B = 1 mA
I_C = 50 mA, I_B = 5 mA
V_BEsat
V_BEsat
Collector cutoff current – Kollektorreststrom
V_CE = 30 V, V_EB = 3 V
I_CEV
Emitter cutoff current – Emitterreststrom
V_CE = 30 V, V_EB = 3 V
I_EBV
Kennwerte (T_j = 25/C)
Min.
Typ.
Max.
–
–
200 mV
–
–
300 mV
–
–
850 mV
–
–
950 mV
–
–
50 nA
–
–
50 nA
1_{) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case}
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
30