1N1199A_07 Datasheet, PDF (1/2 Pages) Diotec Semiconductor – Silicon-Power-Rectifiers

1N1199A ... 1N1206A, 1N3671, 1N3673, PBY271 ... PB277
1N1199A ... 1N1206A, 1N3671, 1N3673,
PBY271 ... PB277
Silicon-Power-Rectifiers
Silizium-Leistungs-Gleichrichter
Version 2007-05-09
Nominal Current
7
Nennstrom
12 A
Ø2
Type
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Metal case
Metallgehäuse
Weight approx. – Gewicht ca.
50 ... 1000 V
DO-4
5.5 g
SW11
M5
Dimensions - Maße [mm]
Standard polarity: Cathode to stud / Kathode am Gewinde
Index R: Anode to stud / Anode am Gewinde (e. g. 1N1199AR)
Standard packaging: bulk
Standard Lieferform: lose im Karton
Maximum ratings
Type
Typ
1N1199A = PBY271
1N1200A = PBY272
1N1202A = PBY273
1N1204A = PBY274
1N1206A = PBY275
1N3671 = PBY276
1N3673 = PBY277
Repetive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
50
100
200
400
600
800
1000
Grenzwerte
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
60
120
240
480
720
1000
1200
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
TC = 85°C
IFAV
f > 15 Hz
IFRM
TA = 25°C
IFSM
TA = 25°C
i²t
Tj
TS
12 A
40 A ¹)
200/240 A
240 A²s
-65...+175°C
-65...+175°C
1 Max. case temperature TC = 85°C – Max. Gehäusetemperatur TC = 85°C
© Diotec Semiconductor AG
http://www.diotec.com/
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