AZV5001 Datasheet, PDF (7/12 Pages) Diodes Incorporated – Low-Power Headset Detection IC in Miniaturized Package

AZV5001
Performance Characteristics
17
16
15
T =-40^OC
A
14
T =+25^OC
13
A
12
T =+85OC
A
11
10
9
8
7
6
5
4
3
2
GND-DET=VDD
1
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Supply Voltage (V)
Supply Current vs. Supply Voltage
17
16
15
T =-40OC
A
14
T =+25^OC
13
12
A
T =+85OC
A
11
10
9
8
7
6
5
4
3
2
GND-DET=0
1
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Supply Voltage (V)
Supply Current vs. Supply Voltage
6.4 _VCC=1.8V
6.2
6.0
5.8
5.6
5.4
5.2
5.0
4.8
4.6
4.4
4.2
4.0
GND-DET=0V
GND-DET=1.8V
-40
-20
0
20
40
60
80
Temperature (^OC)
Supply Current vs. Temperature
220
200
180
160
140
120
100
80
60
40
20
0
0
T =-40OC
A
T =+25OC
A
T =+85OC
A
VCC=1.8V
1
2
3
4
5
Output Sink Current (mA)
Output Low Voltage Characteristics
1.80
1.78
1.76
1.74
1.72
1.70
1.68
1.66
1.64
1.62
1.60
0
VCC=1.8V
T =-40OC
A
T =+25OC
A
T =+85OC
A
-1
-2
-3
-4
-5
Output Source Current (mA)
Output High-Voltage Characteristics
2.0
VCC=1.8V
1.8
1.6
1.4
1.2
1.0
0.8
T =-40^OC
0.6
A
T =+25^OC
A
0.4
T =+85^OC
A
0.2
0.0
0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0
MIC Drain Current (mA)
MIC ON Resistor vs. Drain Current
AZV5001
Document number: DS37993 Rev. 2 - 2
7 of 12
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August 2015
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