ZXMN10A08E6 Datasheet, PDF (6/8 Pages) Zetex Semiconductors – 100V N-CHANNEL ENHANCEMENT MODE MOSFET

Typical Characteristics - continued
A Product Line of
Diodes Incorporated
ZXMN10A08E6
600
V = 0V
GS
500
f = 1MHz
400
300
200
C
ISS
C
OSS
C
RSS
100
0
0.1
1
10
100
V - Drain - Source Voltage (V)
DS
Capacitance v Drain-Source Voltage
10
I = 1.2A
D
8
6
4
2
V = 50V
DS
0
012345678
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Test Circuits
Q_G
V_G
Q _GS
Q _GD
Charge
Basic gate charge waveform
Current
regulator
12V
50k
Same as
D.U.T
V_DS
I_G
D.U.T
I_D
V_GS
Gate charge test circuit
V _DS
90%
10%
V _GS
t_d(on)
t_r
t_(on)
t_d(off)
t_r
t_(on)
V_GS
R_G
R_D
V_DS
V_DD
Switching time waveforms
Switching time test circuit
ZXMN10A08E6
Document Number DS31909 Rev. 7 - 2
6 of 8
www.diodes.com
October 2009
© Diodes Incorporated