MMDT3946FL3 Datasheet, PDF (6/9 Pages) Diodes Incorporated – 40V COMPLEMENTARY NPN-PNP SMALL SIGNAL TRANSISTOR IN DFN1310-6

MMDT3946FL3
Electrical Characteristics, PNP 3906 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 7)
Static Forward Current Transfer Ratio
Symbol
Min
BVCBO
-40
BVCEO
-40
BVEBO
-6.0
ICEX

IBL

60
80
hFE
100
60
30
Collector-Emitter Saturation Voltage
VCE(SAT)

Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
VBE(SAT)
-0.65

Cobo

Cibo

Current Gain-Bandwidth Product
fT

SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
tD

tR

tS

tF

Note:
7. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
Typ










300




Max



-50
-50


300


-0.25
-0.40
-0.85
-0.95
4.5
10

35
35
225
75
Unit
Test Condition
V I_C = -100A, I_E = 0
V I_C = -1.0mA, I_B = 0
V I_E = -100A, I_C = 0
nA V_CE = -30V, V_EB(OFF) = -3.0V
nA V_CE = -30V, V_EB(OFF) = -3.0V
IC = -100µA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
 ^{IC = -10mA, VCE = -1.0V}
IC = -50mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
V ^{IC = -10mA, IB = -1.0mA}
IC = -50mA, IB = -5.0mA
V ^{IC = -10mA, IB = -1.0mA}
IC = -50mA, IB = -5.0mA
pF
pF
MHz
VCB = -5.0V, f = 1.0MHz, IE = 0
VEB = -0.5V, f = 1.0MHz, IC = 0
VCE = -20V, IC = -10mA,
f = 100MHz
ns _{VCC = -3.0V, IC = -10mA,}
ns VBE = -0.5V, IB1 = -1.0mA
ns _{VCC = -3.0V, IC = -10mA,}
ns IB1 = -1.0mA, IB2 = 1.0mA
MMDT3946FL3
Datasheet Number DS38537 Rev.1 - 2
6 of 9
www.diodes.com
May 2016
© Diodes Incorporated