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| FOD3184 Datasheet, PDF (6/23 Pages) Diodes Incorporated – 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler | |||
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Switching Characteristics
Apply over all recommended conditions, typical value is measured at VDD = 30V, VSS = 0V, TA = 25°C,
unless otherwise speciï¬ed.
Symbol Parameter
tPLH
tPHL
PWD
PDD
(tPHL â tPLH)
tr
tf
tUVLO ON
tUVLO OFF
| CMH |
Propagation Delay Time to High Output Level(6)
Propagation Delay Time to Low Output Level(6)
Pulse Width Distortion(7)
Propagation Delay Difference Between Any
Two Parts(8)
Rise Time
Fall Time
UVLO Turn On Delay
UVLO Turn Off Delay
Output High Level Common Mode Transient
Immunity(9) (10)
| CML |
Output Low Level Common Mode Transient
Immunity(9) (11)
*Typical values at TA = 25°C
Test Conditions
IF = 10mA,
Rg = 10â¦,
f = 250kHz,
Duty Cycle = 50%,
Cg = 10nF
CL = 10nF,
Rg = 10â¦
TA = +25°C,
If = 10mA to 16mA,
VCM = 2kV,
VDD = 30V
TA = +25°C,
Vf = 0V,
VCM = 2kV,
VDD = 30V
Min.
50
50
-90
35
35
Typ.*
120
145
35
38
24
2.0
0.3
50
50
Max.
210
210
65
90
Unit
ns
ns
ns
ns
ns
ns
µs
µs
kV/µs
kV/µs
Isolation Characteristics
Symbol Parameter
Test Conditions
VISO
RI-O
CI-O
Withstand Isolation Voltage(12) (13) TA = 25°C,
R.H. < 50%, t = 1min.,
II-O ⤠10µA
Resistance (input to output)(13) VI-O = 500V
Capacitance (input to output)
Freq. = 1MHz
*Typical values at TA = 25°C
Min.
5000
Typ.* Max.
1011
1
Unit
Vrms
â¦
pF
©2005 Fairchild Semiconductor Corporation
FOD3184 Rev. 1.0.4
6
www.fairchildsemi.com
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