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AN75 Datasheet, PDF (6/12 Pages) Diodes Incorporated – High Power Factor LED Replacement T8 Fluorescent Tube
AN75
Free-wheel diode calculation
The free-wheel diode DF shown in Figure 1 is chosen based on its maximum stress voltage and total
power loss. The maximum stress voltage rating of the free-wheel diode is the same as the MOSFET. It
is advisable to use ultra-low reverse recovery time TRR (<35ns) diode as DF to reduce the MOSFET’s
switching ON loss. In the design example, 1A 600V rectifier, MUR160, is selected.
The worst case average current through the diode occurs at VLED(max) and VIN(min).
ID(avg)
=
ILED(nom)
×
⎜⎜⎝⎛1−
VLED(min)
VIN(max)
⎟⎞
⎟⎠
=
240mA
×
⎜⎛1−
⎝
42V
373V
⎟⎞
⎠
=
202mA
Assuming a constant forward voltage drop VF across the diode, the conduction power loss can be
calculated,
PD _ COND = ID(avg) × VF = 202mA ×1.1V = 222mW
Finally, the diode junction temperature without using the heat sink can be calculated from,
Tj = PD _ COND × θthJA + TAMB = 222mW × 32 o C W + 80o C = 87o C
The internal ambient temperature within the LED converter, TAMB, is assumed to be 80ºC. θthJA =
32 o C W is the thermal resistance for DO-201 package. For practical design, it is recommended to
keep the junction temperature below 110ºC to avoid temperature stress on the device.
Issue 1 – January 2011
6
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