ZXTP25100CZ_16 Datasheet, PDF (5/8 Pages) Diodes Incorporated – 100V PNP MEDIUM POWER TRANSISTOR

ZXTP25100CZ
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 11)
Emitter-Collector Breakdown Voltage
(reverse blocking)
Emitter-Collector Breakdown Voltage
(Reverse Blocking)
Emitter-Base Breakdown Voltage
Symbol
BVCBO
BVCEO
BVECX
BVECO
BVEBO
Min
-115
-100
-7
-7
-7
Typ
-180
-140
-8.3
-8.8
-8.4
Collector-Base Cutoff Current
ICBO
—
<-1
Collector-Emitter Cutoff Current
ICEX
—
—
Emitter Cutoff Current
DC current transfer Static ratio (Note 11)
IEBO
—
<1
200
350
180
320
hFE
110
190
20
35
Collector-Emitter Saturation Voltage (Note 11) V_CE(SAT)
—
Base-Emitter Saturation Voltage (Note 11)
Base-Emitter Turn-On Voltage (Note 11)
VBE(SAT)
—
VBE(ON)
—
-140
-80
-180
-155
-860
-800
Transitional Frequency
fT
—
180
Input Capacitance
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
CIBO
153
COBO
—
14.1
tD
—
15.8
tR
—
41
tS
—
411
tF
—
89
Note:
11. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
Max
—
—
—
—
—
-50
-0.5
-100
-50
500
—
—
—
-210
-115
-315
-225
-950
-900
—
—
20
—
—
—
—
Unit
V
V
V
V
V
nA
µA
nA
nA
—
mV
mV
mV
MHz
pF
pF
ns
ns
ns
ns
Test Condition
IC = -100µA
IC = -10mA
IE = -100µA, RBC <1kΩ or
-0.25V > VBC > 0.25V
IE = -100µA
IE = -100µA
VCB = -115V
VCB = -115V, TA = +100°C
VCE = -90V, RBE <1kΩ or
-0.25V < VBE < 1V
VEB = -5.6V
IC = -10mA, VCE = -2V
IC = -100mA, VCE = -2V
IC = -500mA, VCE = -2V
IC = -1A, VCE = -2V
IC = -100mA, IB = -1mA
IC = -500mA, IB = -50mA
IC = -500mA, IB = -20mA
IC = -1A, IB = -100mA
IC = -1A, IB = -100mA
IC = -1A, VCE = -2V
IE = -20mA, VCE = -15V
f = 100MHz
VEB = -0.5V, f = 1MHz,
VCB = -10V, f = 1MHz,
IC = -500mA, VCC = -10V,
IB1 = -IB2 = -50mA
ZXTP25100CZ
Datasheet Number: DS33759 Rev. 2 - 2
5 of 8
www.diodes.com
April 2016
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