ZXTP25100CZ Datasheet, PDF (5/8 Pages) Zetex Semiconductors – 100V PNP medium power transistor

ZXTP25100CZ
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Symbol
Collector-Base breakdown BV_CBO
voltage
Collector-Emitter
breakdown voltage
(base open)
BV_CEO
Emitter-Base breakdown BV_EBO
voltage
Emitter-Collector
breakdown voltage
(reverse blocking)
BV_ECX
Emitter-Collector
breakdown voltage (base
open)
BV_ECO
Collector-Base cut-off
current
I_CBO
Collector-Emitter cut-off I_CEX
current
Emitter-Base cut-off
current
Collector-Emitter
saturation voltage
I_EBO
V_CE(sat)
Base-Emitter saturation
voltage
Base-Eitter turn-on
voltage
Static forward current
transfer ratio
V_BE(sat)
V_BE(on)
h_FE
Transition frequency
Input capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
f_T
C_ibo
C_obo
t_d
t_r
t_s
t_f
Min.
-115
-100
-7
-7
-7
200
180
110
20
Typ.
-180
-140
-8.4
-8.3
-8.8
<-1
<-1
-140
-80
-180
-155
-860
-800
350
320
190
35
180
153
14.1
15.8
41
411
89
Max.
-50
-0.5
-100
-50
-210
-115
-315
-225
-950
-900
500
20
Unit Conditions
V I_C = -100μA
V _{IC = -10mA} ^(*)
V I_E= -100μA
V I_E = -100μA, R_BC < 1kΩ or -
0.25V > V_BC > 0.25V
V I_E = -100μA
nA V_CB =-115V
μA V_CB =-115V, T_amb=100°C
nA V_CE = -90V, R_BE < 1kΩ or -
0.25V < V_BE < 1V
nA V_EB = -5.6V
mV _{IC = -100mA, IB = -1 mA}^(*)
mV _{IC = -500mA, IB = -50mA}^(*)
mV I_C = -500mA, I_B = -20mA^(*)
mV I_C = -1A, I_B = -100mA^(*)
mV _{IC = -1A, IB = -100mA}^(*)
mV _{IC =-1A, VCE = -2V}^(*)
MHz
pF
pF
ns
ns
ns
ns
I_C = -10mA, V_CE = -2V^(*)
I_C = -100mA, V_CE = -2V^(*)
I_C = -500mA, V_CE = -2V^(*)
I_C = -1A, V_CE = -2V^(*)
I_C = -20mA, V_CE = -15V
f = 100MHz
V_EB = -0.5V, f = 1MHz^(*)
V_CB = 10V, f = 1MHz^(*)
V_cc = -10V, I_c = -500mA
I_B1 = -I_B2 = -50mA
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
Issue 1- December 2007
5
© Zetex Semiconductors plc 2007
www.zetex.com