ZXTP25040DZ Datasheet, PDF (5/8 Pages) Zetex Semiconductors – 40V PNP medium power transistor

ZXTP25040DZ
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Collector-Base breakdown
voltage
Collector-Emitter
breakdown voltage
(base open)
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Base breakdown
voltage
Collector cut-off current
Symbol
BV_CBO
BV_CEO
BV_ECO
BV_EBO
I_CBO
Min.
-45
-40
-3
-7
Emitter cut-off current
Collector-Emitter
saturation voltage
I_EBO
V_CE(sat)
Base-Emitter saturation
voltage
V_BE(sat)
Base-emitter turn-on
voltage
V_BE(on)
Static forward current
h_FE
300
transfer ratio
200
20
Transition frequency
f_T
Input capacitance
Output capacitance
Turn-on time
Turn-off time
C_ibo
C_obo
t_(on)
t_(off)
Typ.
-75
-65
Max.
Unit Conditions
V I_C = -100μA
V _{IC= -10mA} ^(*)
-8.7
V I_E = -100μA
-8.2
V I_E = -100μA
<-1
<-1
-170
-70
-215
-970
-50
-0.5
-50
-265
-90
-350
-1050
nA V_CB = -45V
μA V_CB = -45V, T_amb=100°C
nA V_EB = -5.6V
mV _{IC = -1A, IB = -20mA}^(*)
mV _{IC = -1A, IB = -100mA}^(*)
mV I_C = -3.5A, I_B = -350mA^(*)
mV _{IC = -3.5A, IB = -350mA}^(*)
-870 -950 mV _{IC = -3.5A, VCE = -2V}^(*)
450 900
300
50
I_C = -10mA, V_CE = -2V^(*)
I_C = -1A, V_CE = -2V^(*)
I_C = -3.5A, V_CE = -2V^(*)
270
MHz I_C = -50mA, V_CE = -10V
f = 100MHz
142
17.4
75.5
320
pF _{VEB = -0.5V, f = 1MHz}^(*)
pF _{VCB = -10V, f = 1MHz}^(*)
ns V_CC= -15V, I_C = -750mA,
ns ^IB1 ^{= -I}B2 ^{= -15mA,}
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
Issue 1 - December 2007
5
© Zetex Semiconductors plc 2007
www.zetex.com