ZXTP19100CZ_15 Datasheet, PDF (5/8 Pages) Diodes Incorporated – 100V PNP MEDIUM POWER TRANSISTOR IN SOT89

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Symbol
BVCBO
Min
-110
Typ
-135
Collector-Emitter Breakdown Voltage
BVCEX
-110
-135
Collector-Emitter Breakdown Voltage (Note 12)
Emitter-Collector Breakdown Voltage
(Reverse Blocking)
Emitter-Collector Breakdown Voltage
(Reverse Blocking)
Emitter-Base Breakdown Voltage
BVCEO
BVECX
BVECO
BVEBO
-100
-7
-7
-7
-135
-8.3
-8.7
-8.3
Collector-Base Cutoff Current
ICBO
—
<1
Emitter Cutoff Current
DC Current Transfer Static Ratio (Note 12)
IEBO
—
<1
200
300
hFE
70
130
20
25
Collector-Emitter Saturation Voltage (Note 12)
VCE(sat)
—
Base-Emitter Saturation Voltage (Note 12)
Base-Emitter Turn-on Voltage (Note 12)
VBE(sat)
—
VBE(on)
—
-100
-100
-180
-220
-890
-840
Transitional Frequency
fT
—
142
Input Capacitance
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
Cibo
—
291
Cobo
—
23.5
td
—
24.7
tr
—
22.4
ts
—
660
tf
—
107
Note:
12. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
A Product Line of
Diodes Incorporated
ZXTP19100CZ
Max
—
—
—
—
—
—
-50
-0.5
-50
500
—
—
-130
-125
-230
-295
-1000
-950
—
400
40
—
—
—
—
Unit
V
V
V
V
V
V
nA
µA
nA
—
mV
mV
mV
MHz
pF
pF
ns
ns
ns
ns
Test Condition
IC = -100µA
IE = -100µA, RBC <1kΩ or
0.25V > VBC > -0.25V
IC = -10mA
IE = -100µA, RBC <1kΩ or
0.25V > VBC > -0.25V
IE = -100µA
IE = -100µA
VCB = -110V
VCB = -110V, TA = +100°C
VEB = -5.6V
IC = -100mA, VCE = -2V
IC = -1A, VCE = -2V
IC = -2A, VCE = -2V
IC = -0.5mA, IB = -20mA
IC = -1A, IB = -100mA
IC = -1A, IB = -50mA
IC = -2A, IB = -200mA
IC = -2A, IB = -200mA
IC = -2A, VCE = -2V
IE = -100mA, VCE = -10V
f = 50MHz
VEB = -0.5V, f = 1MHz,
VCB = -10V, f = 1MHz,
IC = -500mA, VCC = -10V,
IB1 = -IB2 = -50mA
Rb = 100Ω, Rc = 20Ω
ZXTP19100CZ
Datasheet Number: DS33739 Rev. 2 - 2
5 of 8
www.diodes.com
October 2014
© Diodes Incorporated