ZXTN25060BZ Datasheet, PDF (5/8 Pages) Zetex Semiconductors – 60V, SOT89, NPN medium power transistor

ZXTN25060BZ
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (forward blocking)
Symbol Min.
BV_CBO 150
BV_CEX 150
Collector-emitter breakdown BV_CEO 60
voltage (base open)
Emitter-base breakdown voltage BV_EBO
7
Emitter-collector breakdown BV_ECX
6
voltage (reverse blocking)
Emitter-collector breakdown BV_ECO
6
voltage (base open)
Typ.
190
190
80
8
8
7
Max.
Unit Conditions
V I_C = 100␮A
I_C = 100␮A, R_BE Յ1k⍀ or
-1V < V_BE < 0.25V
V _{IC = 10mA} ^(*)
V I_E = 100␮A
V I_E = 100␮A, R_BC Յ1k⍀ or
0.25V > V_BC > -0.25V
V I_E = 100␮A,
Collector-base cut-off current I_CBO
<1 50 nA V_CB = 120V
20 ␮A _{VCB = 120V, Tamb= 100°C}
Collector-emitter cut-off
I_CEX
current
-
100 nA V_CE = 120V; R_BE Յ1k⍀ or
-1V < V_BE < 0.25V
Emitter-base cut-off current I_EBO
<1 50 nA V_EB = 5.6V
Collector-emitter saturation
voltage
V_CE(sat)
55
70 mV I_C = 1A, I_B = 100mA^(*)
70
90 mV I_C = 1A, I_B = 50mA^(*)
185 230 mV I_C = 4A, I_B = 400mA^(*)
240 305 mV I_C = 5A, I_B = 500mA^(*)
Base-emitter saturation voltage V_BE(sat)
1020 1100 mV _{IC = 5A, IB = 500mA}^(*)
Base-emitter turn-on voltage V_BE(on)
960 1050 mV _{IC = 5A, VCE = 2V}^(*)
Static forward current transfer h_FE
ratio
100 200 300
90 180
I_C = 10mA, V_CE = 2V^(*)
I_C = 1A, V_CE = 2V^(*)
45 90
I_C = 2A, V_CE = 2V^(*)
20
I_C = 5A, V_CE = 2V^(*)
Transition frequency
f_T
185
MHz I_C = 100mA, V_CE = 5V
f = 100MHz
Output capacitance
Delay time
Rise time
Storage time
Fall time
C_OBO
t_d
t_r
t_s
t_f
11.5 20
16
15
509
57
pF _{VCB = 10V, f = 1MHz}^(*)
ns V_CC = 10V. I_C = 500mA,
ns ^{IB1 = IB2= 50mA.}
ns
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 3 - January 2007
5
© Zetex Semiconductors plc 2007
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