ZXTN25020DZ Datasheet, PDF (5/8 Pages) Zetex Semiconductors – 20V NPN high gain transistor

ZXTN25020DZ
Electrical characteristics (at T_amb = 25°C unless otherwise stated).
Parameter
Symbol
Collector-Base breakdown BV_CBO
voltage
Collector-Emitter
breakdown voltage
(forward blocking)
BV_CEX
Collector-Emitter
breakdown voltage
BV_CEO
Emitter-collector
breakdown voltage
(reverse blocking)
BV_ECX
Emitter-Collector
breakdown voltage
(reverse blocking)
BV_ECO
Emitter-Base breakdown BV_EBO
voltage
Collector-Base cut-off
current
I_CBO
Collector-Emitter cut-off I_CEX
current
Emitter cut-off current
Collector-Emitter
saturation voltage
I_EBO
V_CE(sat)
Min.
100
100
20
6
5.0
7.0
Base-Emitter saturation
voltage
V_BE(sat)
Base-Emitter turn-on
voltage
V_BE(on)
Static forward current
h_FE
300
transfer ratio
250
50
Transition frequency
Input capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
f_T
C_ibo
C_obo
t_d
t_r
t_s
t_f
Typ.
125
120
35
8
6.0
8.3
<1
<1
40
60
100
130
100
210
1000
875
450
360
110
15
215
152
16.5
67.7
72.2
361
63.9
Max.
50
0.5
100
50
48
75
120
180
120
270
1050
950
900
25
Unit Conditions
V I_C = 100μA
V I_C = 100μA, R_BE ≤ 1kΩ or
-1V < V_BE < 0.25V
V _{IC= 10mA} ^(*)
V I_E = 100μA, R_BC ≤ 1kΩ or
0.25V > V_BC > -0.25V
V I_E = 100μA
V I_E = 100μA
nA V_CB = 100V
μA V_CB = 100V, T_amb=100°C
nA V_CE = 100V, R_BE ≤ 1kΩ or
-1V < V_BE < 0.25V
nA V_EB = -5.6V
mV _{IC = 1A, IB = 100mA}^(*)
mV _{IC = 1A, IB = 20mA}^(*)
mV I_C = 2A, I_B = 40mA^(*)
mV I_C = 2A, I_B = 20mA^(*)
mV I_C = 3A, I_B = 300mA^(*)
mV I_C = 6A, I_B = 300mA^(*)
mV _{IC = 6A, IB = 300mA}^(*)
mV _{IC = 6A, VCE = 2V}^(*)
MHz
pF
pF
ns
ns
ns
ns
I_C = 10mA, V_CE = 2V^(*)
I_C = 2A, V_CE = 2V^(*)
I_C = 6A, V_CE = 2V^(*)
I_C = 15A, V_CE = 2V^(*)
I_C = 50mA, V_CE = 10V
f = 100MHz
V_EB = 0.5V, f = 1MHz^(*)
V_CB = 10V, f = 1MHz^(*)
I_C = 1A, V_CC = 10V,
I_B1 = -I_B2 = 10mA
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
Issue 1 - January 2008
5
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