ZXTN25012EZ Datasheet, PDF (5/8 Pages) Zetex Semiconductors – 12V NPN high gain transistor

ZXTN25012EZ
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Collector-Base breakdown
voltage
Collector-Emitter
breakdown voltage
Emitter-Collector
breakdown voltage
(reverse blocking)
Symbol
BV_CBO
BV_CEO
BV_ECX
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Base breakdown
voltage
Collector-Base cut-off
current
BV_ECO
BV_EBO
I_CBO
Collector-Emitter cut-off I_CEX
current
Emitter cut-off current
Collector-Emitter
saturation voltage
I_EBO
V_CE(sat)
Min.
20
12
6
4.5
7
Base-Emitter saturation
voltage
V_BE(sat)
Base-Emitter turn-on
voltage
V_BE(on)
Static forward current
h_FE
500
transfer ratio
500
185
30
Transition frequency
f_T
Typ.
40
17
8
5.5
8.3
<1
<1
31
50
70
90
200
950
840
800
750
250
50
260
Max.
50
0.5
100
50
38
60
85
130
270
1050
950
1500
Input capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
C_ibo
C_obo
t_d
t_r
t_s
t_f
137 250
25
35
71
70
233
72
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
Unit Conditions
V I_C = 100μA
V _{IC = 10mA} ^(*)
V I_E = 100mA, R_BC < 1kΩ
or
0.25V > V_BC > -0.25V
V I_E = 100μA
V I_E = 100μA
nA V_CB = 20V
μA V_CB = 20V, T_amb= 100°C
nA V_CE = 20V, R_BE < 1kΩ or
-1V < V_BE < 0.25V
nA V_EB = 5.6V
mV _{IC = 1A, IB = 100mA}^(*)
mV _{IC = 1A, IB = 10mA}^(*)
mV I_C = 2A, I_B = 40mA^(*)
mV I_C = 2A, I_B = 20mA^(*)
mV I_C = 6.5A, I_B = 130mA^(*)
mV _{IC = 6.5A, IB = 130mA}^(*)
mV _{IC = 6.5A, VCE = 2V}^(*)
MHz
pF
pF
ns
ns
ns
ns
I_C = 10mA, V_CE = 2V^(*)
I_C = 1A, V_CE = 2V^(*)
I_C = 6.5A, V_CE = 2V^(*)
I_C = 15A, V_CE = 2V^(*)
I_C = 50mA, V_CE = 10V
f = 100MHz
V_EB = 0.5V, f = 1MHz^(*)
V_CB = 10V, f = 1MHz^(*)
I_C = 1A, V_CC = 10V,
I_B1 =-I_B2 = 10mA
Issue 1 - December 2007
5
© Zetex Semiconductors plc 2007
www.zetex.com