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ZXTN19020DZ Datasheet, PDF (5/8 Pages) Zetex Semiconductors – 20V NPN high gain transistor
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ZXTN19020DZ
Electrical characteristics (at Tamb = 25°C unless otherwise stated).
Parameter
Collector-Base breakdown
voltage
Collector-Emitter
breakdown voltage
(forward blocking)
Collector-Emitter
breakdown voltage
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Base breakdown
voltage
Collector-Base cut-off
current
Symbol
BVCBO
BVCEX
BVCEO
BVECX
BVECO
BVEBO
ICBO
Collector-Emitter cut-off ICEX
current
Emitter cut-off current
Collector-Emitter
saturation voltage
IEBO
VCE(sat)
Min.
70
70
20
6
4.5
7.0
Base-Emitter saturation
voltage
VBE(sat)
Base-Emitter turn-on
voltage
VBE(on)
Static forward current
hFE
300
transfer ratio
260
150
50
Transition frequency
Input capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
fT
Cibo
Cobo
td
tr
ts
tf
Typ.
100
100
30
8.4
5.7
8.4
<1
<1
26
50
75
60
83
155
1000
870
450
390
210
75
35
160
297
32.6
129
96
398
90
Max.
50
0.5
100
50
32
70
100
80
105
200
1100
1000
900
400
40
Unit Conditions
V IC = 100μA
V IC = 100μA, RBE ≤ 1kΩ or
-1V < VBE < 0.25V
V IC= 10mA (*)
V IE = 100μA, RBC ≤ 1kΩ or
0.25V > VBC > -0.25V
V IE = 100μA
V IE = 100μA
nA VCB = 70V
μA VCB = 70V, Tamb=100°C
nA VCE = 70V, RBE ≤ 1kΩ or
-1V < VBE < 0.25V
nA VEB = 5.6V
mV IC = 1A, IB = 100mA(*)
mV IC = 1A, IB = 10mA(*)
mV IC = 2A, IB = 20mA(*)
mV IC = 2A, IB = 40mA(*)
mV IC = 4A, IB = 400mA(*)
mV IC = 7.5A, IB = 375mA(*)
mV IC = 7.5A, IB = 375mA(*)
mV IC = 7.5A, VCE = 2V(*)
MHz
pF
pF
ns
ns
ns
ns
IC = 100mA, VCE = 2V(*)
IC = 2A, VCE = 2V(*)
IC = 7.5A, VCE = 2V(*)
IC = 15A, VCE = 2V(*)
IC = 20A, VCE = 2V(*)
IC = 50mA, VCE = 10V
f = 100MHz
VEB = 0.5V, f = 1MHz(*)
VCB = 10V, f = 1MHz(*)
IC = 1A, VCC = 10V,
IB1 =-IB2 = 10mA
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
Issue 1 - January 2008
5
© Zetex Semiconductors plc 2008
www.zetex.com
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