ZXMN3A14FQ Datasheet, PDF (5/8 Pages) Diodes Incorporated – 30V N-CHANNEL ENHANCEMENT MODE MOSFET

Typical Characteristics
ZXMN3A14FQ
T = 25°C
10
10V _6V
4.5V
1
3.5V
3V
2.5V
V
GS
0.1 _0.1
1
10
V Drain-Source Voltage (V)
DS
Output Characteristics
T = 150°C
10
10V 6V
4V
3V
2.5V
1
2V
V
GS
0.1 _0.1
1
10
V Drain-Source Voltage (V)
DS
Output Characteristics
V = 10V
DS
1
T = 150°C
T = 25°C
0.11.5
2.0
2.5
3.0
3.5
V Gate-Source Voltage (V)
GS
Typical Transfer Characteristics
1.6
V = 10V
GS
1.4
I = 3.2A
D
1.2
R
DS(on)
1.0
0.8
V
GS(th)
0.6
V =V
GS
DS
I = 250uA
D
0.-450
0
50
100
150
Tj Junction Temperature (°C)
Normalised Curves v Temperature
2.5V
1
3V
V
GS
3.5V
4V
0.1
6V
T = 25°C
10V
1
10
I Drain Current (A)
D
On-Resistance v Drain Current
10
T = 150°C
1
T = 25°C
0.1
0.4
0.6
0.8
1.0
V Source-Drain Voltage (V)
SD
Source-Drain Diode Forward Voltage
ZXMN3A14FQ
Document Number DS39100 Rev. 1 - 2
5 of 8
www.diodes.com
August 2016
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