DSS45160FDB Datasheet, PDF (5/9 Pages) Diodes Incorporated – COMPLEMENTARY NPN/PNP LOW VCETRANSISTOR

DSS45160FDB
Electrical Characteristics – Q2 PNP (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 11)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain (Note 11)
Collector-Emitter Saturation Voltage (Note 11)
Equivalent On-Resistance (Note 11)
Base-Emitter Saturation Voltage (Note 11)
Base-Emitter Turn-on Voltage (Note 11)
Symbol Min
BVCBO
-60
BVCEO
-60
BVEBO
-7

ICBO

IEBO

170
hFE
120
70

VCE(sat)


RCE(sat)


VBE(sat)


VBE(on)

Transition Frequency
fT
65
Output Capacitance
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Cob

ton

td

tr

toff

ts

tf

Note:
11. Measured under pulsed conditions. Pulse width  300µs. Duty cycle 2%.
Typ
Max







-100

-50

-100







-180

-340

-550

360

-1

-1.0

-1.1

-0.9



15
75

35

40

265

230

35

Unit
V
V
V
nA
µA
nA

mV
mΩ
V
V
MHz
pF
ns
ns
ns
ns
ns
ns
Test Conditions
IC = -100µA
IC = -10mA
IE = -100µA
VCB = -48V, IE = 0
VCB = -48V, IE = 0, TA = +150°C
VEB = -5.6V, IC = 0
VCE = -2V, IC = -100mA
VCE = -2V, IC = -500mA
VCE = -2V, IC = -1A
IC = -500mA, IB = -50mA
IC = -1A, IB = -100mA
IC = -1A, IB = -50mA
IC = -500mA, IB = -50mA
IC = -0.5A, IB = -50mA
IC = -1A, IB = -50mA
IC = -1A, IB = -100mA
VCE = -2V, IC = -0.5A
VCE = -10V, IC = -50mA,
f = 100MHz
VCB = -10V, f = 1MHz
VCC = -10V, IC = -0.5A,
IB1 = -IB2 = 25mA
DSS45160FDB
Datasheet Number: DS37802 Rev.1 - 2
5 of 9
www.diodes.com
December 2015
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