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| DSS2515M_15 Datasheet, PDF (5/7 Pages) Diodes Incorporated – 15V NPN LOW VCE(sat) TRANSISTOR IN DFN1006 | |||
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Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
DSS2515M
1.0
0.8
IB = 5mA
IB = 4mA
0.6
IB = 3mA
IB = 2mA
0.4
IB = 1mA
0.2
0
0
1
2
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
1
IC/IB = 20
800
700
600
500
TA = 150°C
TA = 125°C
TA = 85°C
400
TA = 25°C
300
200
TA = -55°C
100
0
1
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
1.2
IC/IB = 20
1.0
0.1
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
0.01
TA = -55°C
0.1
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
VCE = 2V
1.0
0.8
TA = -55°C
0.6
TA = 25°C
TA = 85°C
0.4
TA = 125°C
TA = 150°C
0.2
0.1
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 7 Typical Base-Emitter Saturation Voltage
1,000
vs. Collector Current
IC/IB = 20
100
0.8
TA = -55°C
10
0.6
TA = 25°C
0.4
TA = 85°C
TA = 150°C
TA = 125°C
0.2
0.1
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1
TA = -55°C
TA = 25°C
TA = 150°C
TA = 85°C
0.1
0.1
1
TA = 125°C
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
Fig. 9 Typical Collector-Emitter Saturation Resistance
vs. Collector Current
DSS2515M
Document number: DS31816 Rev. 4 - 2
5 of 7
www.diodes.com
May 2015
© Diodes Incorporated
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