DMN3008SFG_15 Datasheet, PDF (5/7 Pages) Diodes Incorporated – 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®

DMN3008SFG
10000
f = 1MHz
C_iss
1000
R_DS(on)
Limited
100
1000
C_oss
C_rss
100
0
5
10
15
20
25
30
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 Typical Junction Capacitance
1
D = 0.7
D = 0.5
D = 0.3
10
DC
1
P_W = 10s
P_W = 1s
P_W = 100ms
0.1 ^{TJ(max) = 150°C}
T_A = 25°C
V_GS = 10V
P_W = 10ms
P_W = 1ms
P_W = 100µs
Single Pulse
0.01 ^{DUT on 1 * MRP Board}
0.01
0.1
1
10
100
-V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 13 SOA, Safe Operation Area
0.1 _{D = 0.1}
D = 0.05
D = 0.9
D = 0.02
0.01
D = 0.01
D = 0.005
Single Pulse
0.001
0.0001
0.001
R_θJA(t) = r(t) * R_θJA
R_θJA = 136°C/W
Duty Cycle, D = t1/ t2
0.01
0.1
1
10
t1, PULSE DURATION TIMES (sec)
Figure 14 Transient Thermal Resistance
100
1000
POWERDI is a registered trademark of Diodes Incorporated
DMN3008SFG
Document number: DS36748 Rev. 5 - 2
5 of 7
www.diodes.com
March 2015
© Diodes Incorporated