DMG9N65CT Datasheet, PDF (5/6 Pages) Diodes Incorporated – Low Input Capacitance

DMG9N65CT
100
10
R_DS(on)
Limited
1
DC
0.1
P_W = 10s
P_W = 1s
P_W = 100ms
0.01
T_J(max) = 150°C
T_A = 25°C
V_GS = 10V
P_W = 10ms
P_W = 1ms
P_W = 100µs
Single Pulse
0.001 ^{DUT on 1 * MRP Board}
1
10
100
V_DS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 SOA, Safe Operation Area
1 _{D = 0.9}
D = 0.7
D = 0.5
D = 0.3
1,000
0.1
D = 0.1
D = 0.05
D = 0.02
0.01 _{D = 0.01}
D = 0.005
D = Single Pulse
0.001
0.001
0.01
R_θJA(t) = r_(t) * R_θJA
R_θJA = 57°C/W
Duty Cycle, D = t1/t2
0.1
1
10
100
t1, PULSE DURATION TIME (sec)
Fig. 10 Transient Thermal Resistance
1,000
10,000
DMG9N65CT
Document number: DS35619 Rev. 7 - 2
5 of 6
www.diodes.com
February 2015
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