DMG4N60SK3 Datasheet, PDF (5/7 Pages) Diodes Incorporated – 600V N-CHANNEL ENHANCEMENT MODE MOSFET

DMG4N60SK3
1
D=0.5
D=0.3
D=0.7 D=0.9
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
D=Single Pulse
R_JC(t)=r(t) *R_JC
R_JC=2.62℃/W
Duty Cycle, D=t1 / t2
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
(1) Package Type: TO252 (DPAK)
E
A
b3
7° ± 1°
c
L3
D
A2
L4
H
e
b2(2x)
E1
b(3x)
0.508
Gauge Plane
D1
L
2.74REF
Seating Plane
A1
TO252 (DPAK)
Dim Min Max Typ
A 2.19 2.39 2.29
A1 0.00 0.13 0.08
A2 0.97 1.17 1.07
b 0.64 0.88 0.783
b2 0.76 1.14 0.95
b3 5.21 5.46 5.33
c 0.45 0.58 0.531
D 6.00 6.20 6.10
D1 5.21 -
-
e-
- 2.286
E 6.45 6.70 6.58
E1 4.32 -
-
H 9.40 10.41 9.91
L 1.40 1.78 1.59
L3 0.88 1.27 1.08
L4 0.64 1.02 0.83
a 0° 10° -
All Dimensions in mm
DMG4N60SK3
Document number: DS37697 Rev. 2 - 2
5 of 7
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November 2015
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