DMC3400SDW_15 Datasheet, PDF (5/9 Pages) Diodes Incorporated – COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

0.6
0.5
0.4
V_GS=4.5V, I_D=200mA
0.3
0.2
0.1
V_GS=10V, I_D=590mA
0
-50
-25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with
Temperature
1
0.9
V_GS=0V
0.8
0.7
0.6
0.5
0.4
T_A=150℃
0.3
0.2
T_A=125℃
0.1
T_A=85℃
T_A=25℃
T_A=-55℃
0
0
0.3
0.6
0.9
1.2
1.5
V_SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
8
DMC3400SDW
2
1.8
1.6
I_D=1mA
1.4
1.2
I_D=250µA
1
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Theshold Variation vs. Junction
Temperature
100
f=1MHz
C_iss
10
C_oss
C_rss
1
0
5
10
15
20
25
30
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
10
R_DS(ON)
Limited
1
6
4
V_DS=10V, I_D=250mA
2
0
0
0.3
0.6
0.9
1.2
Qg (nC)
Figure 11. Gate Charge
DMC3400SDW
Document number: DS37690 Rev. 1 - 2
DC
P_W=10s
0.1
P_W=1s
P_W=100ms
0.01
0.001
P_W=10ms
T_J(Max)=150℃
T_A=25℃
V_GS=10V
P_W=1ms
Single Pulse
DUT on 1*MRP Board
P_W=100μs
1.5
0.1
1
10
100
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
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February 2015
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