APR34150 Datasheet, PDF (5/10 Pages) Diodes Incorporated – SECONDARY SIDE SYNCHRONOUS RECTIFICATION SWITCHER

Electrical Characteristics (@TA =+25°C, unless otherwise specified. Cont.)
MOSFET Static Characteristics
Parameters
Symbol
Conditions
Min
Drain to Source Breakdown
Voltage
VDSS(BR)
VGS=0V, ID=0.25mA
50
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=0.25mA
0.5
Zero Gate Voltage Drain
Current
IDSS
VDS=50V, VGS=0V
–
Gate to Source Leakage
Current
IGSS
VGS=10V, VDS=0V
–
Drain to Source On-state
Resistance
RDS(ON)
VGS=4.5V, ID=15A
12
MOSFET Dynamic Characteristics
Parameters
Symbol
Conditions
Min
Input Capacitance
Ciss
–
Output Capacitance
Coss
VGS=0V, VDS=25V, f=1MHz
–
Reverse Transfer Capacitance
Crss
–
Gate to Source Charge
Gate to Drain Charge (Miller
Charger)
Total Gate Charge
Qgs
–
Qgd
VGS=0V to 10V, VDD=25V,
ID=15A
–
Qg
–
Gate Resistance
Rg
–
–
Typ
–
0.9
–
–
17
Typ
1316
97
85
3.2
5.7
15.2
0.85
APR34150
Max
Unit
–
V
2
V
1
μA
±10
μA
30
mΩ
Max
Unit
–
–
pF
–
–
–
nC
–
–
Ω
Operation Description
MOSFET Driver
The operation of the SR is described with timing diagram shown in Figure 1. APR34150 monitors the MOSFET drain-source voltage. When the
drain voltage is lower than the turn-on threshold voltage VTHON, the IC outputs a positive drive voltage after a turn-on delay time (tDON). The
MOSFET will turn on and the current will transfer from the body diode into the MOSFET’s channel.
In the process of drain current decreasing linearly toward zero, the drain-source voltage rises synchronically. When it rises over the turn off
threshold voltage VTHOFF, APR34150 pulls the drive signal down after a turn off delay (tDOFF).
I,V
VDET
IS
VTHON
0
VTHOFF
t
APR34150
Document number: DS37985 Rev. 2 - 2
VDRISR
0.9VDRISR
0.9VDRISR
0
tDON
0.1VDRISR
tRG
tDOFF
0.1VDRISR
tFG
t
Figure 1. Typical Waveforms of APR34150
5 of 10
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October 2015
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