ZXTP749F_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 25V PNP LOW SATURATION TRANSISTOR IN SOT23

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ZXTP749F
Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Symbol
Min
BV_CBO
-35
BV_CEO
-25
BV_EBO
-7
Collector Cutoff Current
I_CBO
-
Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 7)
I_EBO
-
200
h_FE
130
100
25
Collector-Emitter Saturation Voltage (Note 7)
Base-Emitter Turn-On Voltage (Note 7)
Base-Emitter Saturation Voltage (Note 7)
V_CE(sat)
-
-
V_BE(on)
-
V_BE(sat)
-
Notes: 7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
Typ
-60
-40
-8.4
<1
<1
320
230
180
50
-85
-229
-786
-895
Max
-
-
-
-50
-0.5
-50
500
-
-
-
-150
-350
-850
-1000
Unit
V
V
V
nA
µA
nA
-
mV
mV
mV
Test Condition
I_C = -100µA
I_C = -10mA
I_E = -100µA
V_CB = -28V
V_CB = -28V, T_A = +100°C
V_EB = -5.6V
I_C = -100mA, V_CE = -2V
I_C = -1A, V_CE = -2V
I_C = -2A, V_CE = -2V
I_C = -6A, V_CE = -2V
I_C = -1A, I_B = -100mA
I_C = -3A, I_B = -300mA
I_C = -1A, V_CE = -2V
I_C = -1A, I_B = -100mA
ZXTP749F
Document Number: DS31901 Rev. 3 - 2
4 of 7
www.diodes.com
January 2013
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