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| ZXTP722MA_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 70V PNP LOW SATURATION TRANSISTOR | |||
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A Product Line of
Diodes Incorporated
ZXTP722MA
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 6)
Symbol
Min
BVCBO
-70
BVCEO
-70
BVEBO
-7
ICBO
-
IEBO
-
ICES
-
300
300
hFE
175
40
-
Collector-Emitter Saturation Voltage (Note 6)
-
VCE(sat)
-
-
-
Base-Emitter Turn-On Voltage (Note 6)
Base-Emitter Saturation Voltage (Note 6)
Output Capacitance
VBE(on)
-
VBE(sat)
-
Cobo
-
Transition Frequency
fT
150
Turn-On Time
Turn-Off Time
ton
-
toff
-
Notes: 6. Measured under pulsed conditions. Pulse width ⤠300 µs. Duty cycle ⤠2%.
Typ
-150
-125
-8.5
-
-
-
470
450
275
60
10
-35
-135
-140
-175
-0.78
-0.94
14
180
40
700
Max
-
-
-
-100
-100
-100
-
-
-
-
-
-50
-200
-220
-270
-1.00
-1.05
20
-
-
-
Unit
V
V
V
nA
ï nA
nA
-
mV
V
V
pF
MHz
ns
ns
Test Condition
IC = -100µA
IC = -10mA
IE = -100µA
VCB = -55V
VEB = -6V
VCES = -55V
IC = -10mA, VCE = -5V
IC = -100mA, VCE = -5V
IC = -1A, VCE = -5V
IC = -1.5A, VCE = -5V
IC = -3A, VCE = -5V
IC = -0.1A, IB = -10mA
IC = -0.5A, IB = -20mA
IC = -1A, IB = -100mA
IC = -1.5A, IB = -200mA
IC = -1.5A, VCE = -5V
IC = -1.5A, IB = -200mA
VCB = -10V. f = 1MHz
VCE = -10V, IC = -50mA,
f = 100MHz
VCC = -50V, IC = -1A
IB1 = IB2 = -50mA
ZXTP722MA
Document Number DS31885 Rev. 5 - 2
4 of 7
www.diodes.com
January 2011
© Diodes Incorporated
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