ZXTP717MA Datasheet, PDF (4/7 Pages) Diodes Incorporated – 12V PNP LOW SATURATION SWITCHING TRANSISTOR

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ZXTP717MA
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 7)
Symbol
Min
BV_CBO
-20
BV_CEO
-12
BV_EBO
-7
I_CBO
-
I_EBO
-
I_CES
-
300
300
h_FE
180
60
45
Collector-Emitter Saturation Voltage (Note 7)
-
-
V_CE(sat)
-
-
-
Base-Emitter Turn-On Voltage (Note 7)
Base-Emitter Saturation Voltage (Note 7)
Output Capacitance
V_BE(on)
-
V_BE(sat)
-
C_obo
-
Transition Frequency
f_T
100
Turn-On Time
Turn-Off Time
t_on
-
t_off
-
Notes: 7. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
Typ
-35
-25
-8.5
-
-
-
475
450
275
100
70
-10
-100
-100
-195
-240
-0.87
-0.97
21
110
70
130
Max
-
-
-
-100
-100
-100
-
-
-
-
-
-17
-140
-150
-300
-310
-0.96
-1.07
30
-
-
-
Unit
V
V
V
nA
nA
nA
-
mV
V
V
pF
MHz
ns
ns
Test Condition
I_C = -100 µA
I_C = -10 mA
I_E = -100 µA
V_CB = -16V
V_EB = -6V
V_CES = -10V
I_C = -10mA, V_CE = -2V
I_C = -100mA, V_CE = -2V
I_C = -2.5A, V_CE = -2V
I_C = -8A, V_CE = -2V
I_C = -10A, V_CE = -2V
I_C =- 0.1A, I_B = -10mA
I_C = -1A, I_B = -10mA
I_C = -1.5A, I_B = -50mA
I_C = -3A, I_B = -50mA
I_C = -4A, I_B = -150mA
I_C = -4A, V_CE = -2V
I_C = -4A, I_B = -150mA
V_CB = -10V. f = 1MHz
V_CE = -10V, I_C = -50mA,
f = 100MHz
V_CC = -6V, I_C = -2A
I_B1 = I_B2 = -50mA
ZXTP717MA
Document Number DS31881 Rev. 5 - 2
4 of 7
www.diodes.com
January 2011
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