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| ZXTP25100CFH_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 100V PNP MEDIUM POWER TRANSISTOR IN SOT23 | |||
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A Product Line of
Diodes Incorporated
ZXTP25100CFH
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Symbol
BVCBO
BVCEO
BVEBO
BVECX
BVECO
ICBO
Min
-115
-100
-7
-7
-7
-
-
Typ
-180
-140
-8.4
-8.3
-8.8
< -1
-
Collector-Emitter Cutoff Current
ICEX
-
Emitter-Base Cutoff Current
IEBO
-
200
180
Static Forward Current Transfer Ratio (Note 10)
hFE
110
20
-
-
Collector-Emitter Saturation Voltage (Note 10)
VCE(sat)
-
-
Base-Emitter Saturation Voltage (Note 10)
VBE(sat)
-
Base-Emitter Saturation Voltage (Note 10)
VBE(on)
-
Output Capacitance
Cobo
-
Transition Frequency
fT
-
Delay Time
Rise Time
Storage Time
Fall Time
t(d)
-
t(r)
-
t(s)
-
t(f)
-
Notes: 10. Measured under pulsed conditions. Pulse width ⤠300 µs. Duty cycle ⤠2%
-
< -1
350
320
190
35
-140
-80
-180
-150
-849
-790
14.1
180
15.8
41
411
89
Max
-
-
-
-
-
-50
-0.5
-100
-50
500
-
-
-
-210
-110
-310
-220
-950
-900
20
-
-
-
-
-
Unit
V
V
V
V
V
nA
µA
nA
nA
-
mV
mV
mV
pF
MHz
ns
ns
ns
ns
Test Condition
IC = -100µA
IC = -10mA
IE = -100µA
IE = -100µA, RBC < 1k⦠or
-0.25 < VBC < 0.25V
IE = -100µA
VCB = -115V
VCB = -115V, Tamb = 100°C
VCE = -90V, RBE < 1k⦠or
-0.25V < VBE < 1V
VEB = -5.6V
IC = -10mA, VCE = -2V
IC = -100mA, VCE = -2V
IC = -500mA, VCE = -2V
IC = -1A, VCE = -2V
IC = - 100mA, IB = -1mA
IC = - 500mA, IB = -50mA
IC = - 500mA, IB = -20mA
IC = - 1A, IB = -100mA
IC = -1A, IB = -100mA
IC = -1A, VCE = -2V
VCB = -10V, f = 1MHz
VCE = -15V, IC = -20mA,
f = 100MHz
VCC = -10V, IC = -500mA,
IB1 = IB2 = -50mA
ZXTP25100CFH
Document Number: DS33758 Rev. 3 - 2
4 of 7
www.diodes.com
August 2012
© Diodes Incorporated
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