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| ZXTP25100BFH Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 100V, SOT23, PNP medium power transistor | |||
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ZXTP25100BFH
Electrical characteristics (at TAMB = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter
breakdown voltage
(forward blocking)
Symbol
BVCBO
BVCEX
Min.
-140
-140
Collector-emitter
breakdown voltage (base
open)
Emitter-collector
breakdown voltage
(reverse blocking)
BVCEO
BVECX
-100
-7
Emitter-base breakdown BVEBO
-7
voltage
Collector cut-off current ICBO
Collector emitter cut-off ICEX
current
Typ.
-165
-165
-125
8.2
-8.2
<-1
-
Max.
-50
-20
-100
Unit
V
V
V
V
V
nA
â®A
nA
Emitter cut-off current
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
Base-emitter turn-on
voltage
Static forward current
transfer ratio
Transition frequency
IEBO
VCE(sat)
VBE(sat)
<-1 -50 nA
-60 -90 mV
-240 -350 mV
-100 -130 mV
-215 -295 mV
-900 -1000 mV
VBE(on)
-830 -950 mV
hFE
100 200 300
55 105
15
25
fT
200
MHz
Output capacitance
COBO
15
25
pF
Turn-on time
Turn-off time
t(on)
t(off)
31
ns
384
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Õ
300â®s; duty cycle Õ
2%.
Conditions
IC = -100â®A
IC = -100â®A,
RBE < 1kâ or
-0.25V < VBE < 1V
IC = -10mA (*)
IE = -100â®A,
RBC < 1kâ or
-0.25V < VBC < 0.25V
IE = -100â®A
VCB = -112V
VCB = -112V, TAMB= 100°C
VCE = -112V;
RBE < 1kâ or
-0.25V < VBE < 1V
VEB = -5.6V
IC = -0.5A, IB = -50mA (*)
IC = -0.5A, IB = -10mA (*)
IC = -1A, IB = -100mA (*)
IC = -2A, IB = -200mA (*)
IC = -2A, IB = -200mA (*)
IC = -2A, VCE = -2V (*)
IC = -10mA, VCE = -2V (*)
IC = -1A, VCE = -2V (*)
IC = -2A, VCE = -2V (*)
IC = -100mA, VCE = -5V
f = 100MHz
VCB = -10V, f = 1MHz (*)
VCC = -10V, IC = -500mA,
IB1 = IB2= -50mA
Issue 1 - March 2006
4
© Zetex Semiconductors plc 2006
www.zetex.com
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