ZXTP25040DFH Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 40V SOT23 PNP medium power transistor

ZXTP25040DFH
Electrical characteristics (at T_AMB = 25°C unless otherwise stated)
Parameter
Symbol
Collector-base breakdown BV_CBO
voltage
Collector-emitter breakdown BV_CEO
voltage (base open)
Emitter-collector breakdown BV_ECO
voltage (reverse blocking)
Emitter-base breakdown
voltage
BV_EBO
Collector cut-off current
I_CBO
Min.
-45
-40
-3
-7
Emitter cut-off current
I_EBO
Collector-emitter saturation V_CE(sat)
voltage
Base-emitter saturation
voltage
V_BE(sat)
Base-emitter turn-on voltage V_BE(on)
Static forward current
h_FE
300
transfer ratio
200
30
Transition frequency
f_T
Output capacitance
Turn-on time
C_OBO
t_(on)
Turn-off time
t_(off)
Typ. Max. Unit Conditions
-75
V I_C = -100␮A
-65
V _{IC = -10mA} ^(*)
-8.7
V I_E = -100uA
-8.2
V I_E = -100␮A
<-1
<-1
-170
-65
-165
-930
-50
-0.5
-50
-260
-85
-220
-1000
nA V_CB = -45V
␮A _{VCB = -45V, Tamb= 100°C}
nA V_EB = -5.6V
mV _{IC = -1A, IB = -20mA} ^(*)
mV _{IC = -1A, IB = -100mA} ^(*)
mV _{IC = -3A, IB = -300mA} ^(*)
mV _{IC = -3A, IB = -300mA} ^(*)
-830
450
300
60
270
17.4
75.5
320
-900
900
mV
MHz
pF
ns
ns
I_C = -3A, V_CE = -2V ^(*)
I_C = -10mA, V_CE = -2V ^(*)
I_C = -1A, V_CE = -2V ^(*)
I_C = -3A, V_CE = -2V ^(*)
I_C = -50mA, V_CE = -10V
f = 100MHz
V_CB = -10V, f = 1MHz ^(*)
V_CC = -15V. I_C = -750mA,
I_B1 = I_B2= -15mA.
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 5 - March 2008
4
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