ZXTP25020DFL Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 20V, SOT23, PNP low power transistor

ZXTP25020DFL
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (base open)
Emitter-base breakdown
voltage
Emitter-collector breakdown
voltage (reverse blocking)
Collector cut-off current
Symbol
BV_CBO
BV_CEO
BV_EBO
BV_ECO
I_CBO
Emitter cut-off current
Collector-emitter saturation
voltage
I_EBO
V_CE(sat)
Base-emitter saturation voltage V_BE(sat)
Base-emitter turn-on voltage V_BE(on)
Static forward current transfer h_FE
ratio
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
f_T
C_obo
t_(d)
t_(r)
t_(s)
t_(f)
Min. Typ. Max. Unit Conditions
-25 -55
V I_C = -100␮A
-20 -45
-7 -8.3
V _{IC = -10mA} ^(*)
V I_E = -100␮A
-4 -8.5
V _{IE = -100uA}^(*)
<-1 -50 nA V_CB = -20V
-20 ␮A V_CB = -20V, T_amb= 100°C
<-1 -50 nA V_EB = -5.6V
-65 -85 mV _{IC = -1A, IB = -100mA}^(*)
-160 -225 mV _{IC = -1A, IB = -10mA}^(*)
150 -195 mV _{IC = -1.5A, IB = -30mA}^(*)
-210 -275 mV _{IC = -2A, IB = -40mA}^(*)
-215 260 mV _{IC = -4A, IB = -400mA}^(*)
-845 -950 mV _{IC = -1.5A, IB = -30mA}^(*)
-785 -900 mV _{IC = -1.5A, VCE = -2V}^(*)
300 450 900
I_C = -10mA, V_CE = -2V^(*)
160 250
I_C = -1.5A, V_CE = -2V^(*)
60 90
I_C = -4A, V_CE = -2V^(*)
15
I_C = -10A, V_CE = -2V^(*)
290
MHz I_C = -50mA, V_CE = -10V
f = 50MHz
21 30
14.2
16.3
pF _{VCB = -10V, f = 1MHz}^(*)
V_CC = -10V. I_C = -1A, I_B1
= I_B2= -50mA.
186
32.7
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Issue 1 - January 2007
4
© Zetex Semiconductors plc 2007
www.zetex.com