ZXTP25020CFH_16 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 20V PNP LOW POWER TRANSISTOR

ZXTP25020CFH
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Collector-Base Breakdown Voltage
BVCBO
-25
Collector-Emitter Breakdown Voltage (Note 11)
BVCEO
-20
Emitter-Base Breakdown Voltage
BVEBO
-7
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
BVECO
-7
—
ICBO
—
Emitter-Base Cutoff Current
IEBO
—
200
—
Static Forward Current Transfer Ratio (Note 11)
hFE
—
—
—
—
Collector-Emitter Saturation Voltage (Note 11)
VCE(sat)
—
—
Base-Emitter Saturation Voltage (Note 11)
Base-Emitter Saturation Voltage (Note 11)
Output Capacitance
Transition Frequency
VBE(sat)
—
VBE(on)
—
Cobo
—
—
fT
Delay Time
Rise Time
Storage Time
Fall Time
t(d)
—
t(r)
—
t(s)
—
t(f)
—
Note:
11. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
Typ
-50
-35
-8.2
-8.8
< -1
—
< -1
350
250
140
40
-43
-70
-120
-150
-930
-810
32.4
285
38.4
49.2
168
55
Max
—
—
—
—
-50
-20
-50
500
—
—
—
-55
-100
-170
-210
-1050
-900
40
—
—
—
—
—
Unit
V
V
V
V
nA
µA
nA
—
mV
mV
mV
pF
MHz
nS
nS
nS
nS
Test Condition
IC = -100µA
IC = -10mA
IE = -100µA
IE = -100µA
VCB = -20V
VCB = -20V, Tamb = +100°C
VEB = -5.6V
IC = -10mA, VCE = -2V
IC = -1A, VCE = -2V
IC = -4A, VCE = -2V
IC = -10A, VCE = -2V
IC = -1A, IB = -100mA
IC = -1A, IB = -20mA
IC = -2A, IB = -40mA
IC = -4A, IB = -200mA
IC = -4A, IB = -200mA
IC = -4A, VCE = -2V
VCB = -10V, f = 1MHz
VCE = -10V, IC = -50mA,
f = 100MHz
VCC = -15V, IC = -750mA,
IB1 = -IB2 = -15mA
ZXTP25020CFH
Document Number: DS33748 Rev. 4 - 2
4 of 7
www.diodes.com
September 2015
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