ZXTP25020BFH Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 20V, SOT23, PNP medium power transistor

ZXTP25020BFH
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (forward blocking)
Collector-emitter breakdown
voltage (base open)
Emitter-base breakdown
voltage
Symbol Min.
BV_CBO -40
BV_CEX -40
BV_CEO -20
BV_EBO
-7
Typ.
-60
-60
-35
-8.2
Max. Unit Conditions
V I_C = -100␮A
V _{IE = -100␮A} ^(*) _{RBE < 1k⍀}
or 1V < V_BE < -0.25V
V _{IC = -10mA}^(*)
V I_E = -100␮A
Emitter-collector breakdown BV_ECX
-6
-8
voltage (reverse blocking)
V _{IE = -100␮A} ^(*) _{RBC < 10k⍀}
or 0.25 < V_BC < -0.25V
Emitter-collector breakdown BV_ECO
voltage (base open)
-7 -8.6
V _{IE = -100␮A}^(*)
Collector-base cut-off current I_CBO
<-1 -50 nA V_CB = -32V
-20 ␮A V_CB = -32V, T_amb= 100°C
Collector-emitter cut-off
I_CEX
current
-
100 nA V_CE = -32V; R_BE < 1k⍀
or 1V < V_BE < -0.25V
Emitter-base cut-off current I_EBO
<-1 -50 nA V_EB = -5.6V
Collector-emitter saturation V_CE(sat)
voltage
-44 -60 mV _{IC = -1A, IB = -100mA}^(*)
-80 -110 mV _{IC = -1A, IB = -20mA}^(*)
-125 -190 mV _{IC = -2A, IB = -40mA}^(*)
-160 -210 mV _{IC = -4A, IB = -200mA}^(*)
-160 -210 mV _{IC = -5A, IB = -500mA}^(*)
Base-emitter saturation
voltage
V_BE(sat)
-930 -1000 mV _{IC = -4A, IB = -200mA}^(*)
Base-emitter turn-on voltage V_BE(on)
-820 -900 mV _{IC = -4A, VCE = -2V}^(*)
Static forward current
transfer ratio
h_FE
100 200 300
80 160
I_C = -10mA, V_CE = -2V^(*)
I_C = -1A, V_CE = -2V^(*)
50 100
I_C = -4A, V_CE = -2V^(*)
45
I_C = -10A, V_CE = -2V^(*)
Transition frequency
f_T
250
MHz I_C = -50mA, V_CE = -10V
f = 100MHz
Output capacitance
Delay time
Rise time
Storage time
Fall time
C_OBO
t_d
t_r
t_s
t_f
32.5 40
53
63
128
50
pF _{VCB = -10V, f = 1MHz}^(*)
ns V_CC = -15V,
ns ^IC ^{= -750mA,}
ns ^{IB1 = IB2= -15mA}
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ 2%.
Issue 2 - March 2008
4
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