ZXTP25015DFH Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 15V, SOT23, PNP medium power transistor

ZXTP25015DFH
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage (base open)
Emitter-base breakdown
voltage
Emitter-collector breakdown
voltage (base open)
Collector-base cut-off current
Symbol
BV_CBO
BV_CEO
BV_EBO
BV_ECO
I_CBO
Emitter-base cut-off current
Collector-emitter saturation
voltage
I_EBO
V_CE(sat)
Base-emitter saturation
voltage
V_BE(sat)
Base-emitter turn-on voltage V_BE(on)
Static forward current transfer h_FE
ratio
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
Fall time
f_T
C_OBO
t_d
t_r
t_s
t_f
Min.
-15
-15
-7
-3
300
200
90
Typ. Max. Unit Conditions
-35
V I_C = -100␮A
-30
V _{IC = -10mA} ^(*)
-8.4
V I_E = -100␮A
-8.2
V _{IE = -100␮A}^(*)
<-1 -50 nA V_CB = -12V
-20 ␮A _{VCB = -12V, Tamb= 100°C}
<-1 -50 nA V_EB = -5.6V
-45 -55 mV _{IC = -1A, IB = -100mA}^(*)
-110 -150 mV _{IC = -1A, IB = -10mA}^(*)
-130 -175 mV _{IC = -2A, IB = -40mA}^(*)
-160 -210 mV _{IC = -4A, IB = -200mA}^(*)
-165 -220 mV _{IC = -5A, IB = -500mA}^(*)
-930 -1050 mV _{IC = -4A, IB = -200mA}^(*)
-810
450
315
145
30
295
25
33.8
43.5
196
51.7
-900
900
30
mV
MHz
I_C = -4A, V_CE = -2V^(*)
I_C = -10mA, V_CE = -2V^(*)
I_C = -1A, V_CE = -2V^(*)
I_C = -4A, V_CE = -2V^(*)
I_C = -10A, V_CE = -2V^(*)
I_C = -50mA, V_CE = -10V
f = 100MHz
pF _{VCB = -10V, f = 1MHz}^(*)
ns V_CC = -15V.
ns ^IC ^{= -750mA,}
ns ^{IB1 = IB2= -15mA}
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ 2%.
Issue 2 - March 2008
4
© Zetex Semiconductors plc 2008
www.zetex.com