ZXTP23015CFH Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 15V, SOT23, PNP medium power transistor

ZXTP23015CFH
ELECTRICAL CHARACTERISTICS (at T_AMB = 25°C unless otherwise stated)
Parameter
Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage V_(BR)CBO -15 -40
V I_C=-100␮A
Collector-emitter breakdown
voltage
V_(BR)CES -15 -40
V I_C =-100␮A
Collector-emitter breakdown
voltage
V_(BR)CEO -15 -25
V _IC=-10mA^(*)
Emitter-base breakdown voltage V_(BR)EBO -7.0 -8.2
V I_E=-100␮A
Emitter-collector breakdown
voltage
V_(BR)ECO -6.0 -8.5
V I_E=-100␮A
Collector-emitter cut-off current I_CES
-20 nA V_CE=-12V
Collector-base cut-off current
I_CBO
-20 nA V_CB=-12V
Emitter-base cut-off current
I_EBO
-10 nA V_EB=-6V
Static forward current transfer
H_FE
ratio
200 380
200 350 560
I_C=-10mA, V_CE=-2V ^(*)
I_C=-500mA, V_CE=-2V
140 220
Ic=-6A, V_CE=-2V
Collector-emitter saturation
voltage
V_CE(sat)
-6 -10 mV _{IC=-100mA, IB=-10mA}^(*)
-27 -36 mV _{IC=-1A, IB=-100mA}^(*)
-90 -120 mV _{IC=-3A, IB=-60mA}^(*)
-140 -190 mV _{IC=-6A, IB=-240mA}^(*)
Base-emitter saturation voltage V_BE(sat)
-0.83 -0.93 V _{IC=-3A, IB=-60mA}^(*)
-0.93 -1.03 V _{IC=-6A, IB=-240mA}^(*)
Base-emitter turn-on voltage
V_BE(on)
-0.83 -0.93 V _{IC=-6A, VCE=-2V}^(*)
Transition frequency
f_T
270
MHz Ic=-500mA, V_CE=-2V,
f=50MHz
Output capacitance
C_obo
78.4
pF V_CB=-10V, f=1MHz
Delay time
Rise time
t _(d)
16
ns V_CC=-5V, I_C=-3A,
t _(r)
13
ns ^{IB1=IB2=-150mA}
Storage time
t _(stg)
123
ns
Fall time
t _(f)
9
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300␮S. Duty cycle Յ2%.
Issue 2 - May 2007
4
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