ZXTP2029F Datasheet, PDF (4/8 Pages) Zetex Semiconductors – 100V, SOT23, PNP medium power transistor

ZXTP2029F
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown
voltage
Collector-emitter cut-off
current
Symbol
V_(BR)CBO
V_(BR)CEV
V_(BR)CEO
V_(BR)EBO
I_CEV
Collector-base cut-off current I_CBO
Emitter-base cut-off current I_EBO
Static forward current
H_FE
transfer ratio
Collector-emitter saturation V_CE(sat)
voltage
Base-emitter saturation
voltage
Base-emitter turn-on voltage
V_BE(sat)
V_BE(on)
Transition frequency
f_T
Output capacitance
Delay timetime
Rise time
Storage time
Fall time
C_obo
t_(d)
t_(r)
t_(stg)
t_(f)
Min.
-130
-130
-100
-7.0
100
100
40
Typ.
-160
-160
-120
-8.3
220
200
75
-20
-60
-135
-180
-0.90
-0.81
150
39
21
12
410
35
Max.
-20
-20
-10
300
-30
-80
-180
-250
-1.00
-0.90
Unit Conditions
V I_C=-100μA
V I_C =−1μA, 1V> V_BE>-0.3V
V _IC=-10mA ^(a)
V I_E=-100μA
nA V_CE=-100V,
V_BE = 1V
nA V_CB=-100V
nA V_EB=-6V
I_C=-10mA, V_CE=-2V^(a)
I_C=-1A, V_CE=-2V^(a)
Ic=-3A, V_CE=-2V
mV _{IC=-100mA, IB=-10mA}^(a)
mV _{IC=-1A, IB=-100mA}^(a)
mV _{IC=-3A, IB=-300mA}^(a)
mV _{IC=-4A, IB=-400mA}^(a)
V _{IC=-3A, IB=-300mA}^(a)
V
MHz
pF
ns
ns
I_C=-3A, V_CE=-2V^(a)
Ic=-100mA, V_CE=-10V,
f=50MHz
V_CB=-10V, f=1MHz
V_CC=-10V, I_C=-1A,
I_B1=I_B2=-100mA
ns
ns
NOTES:
(a) Measured under pulsed conditions. Pulse width=300␮S. Duty cycle Յ2%.
Issue 3 - May 2007
4
© Zetex Semiconductors plc 2007
www.zetex.com