ZXTP2025F_15 Datasheet, PDF (4/6 Pages) Diodes Incorporated – 50V, SOT23, PNP medium power transistor

ZXTP2025F
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown
voltage
Collector-emitter cut-off
current
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CEV
Collector-base cut-off current
Emitter-base cut-off current
Static forward current transfer
ratio
I_CBO
I_EBO
H_FE
Collector-emitter saturation
voltage
V_CE(sat)
Base-emitter saturation
voltage
V_BE(sat)
Base-emitter turn-on voltage
Transition frequency
V_BE(on)
f_T
Output capacitance
Delay time
Rise time
Storage time
Fall time
C_obo
t_(d)
t_(r)
t_(stg)
t_(f)
Min.
-50
-50
-7.0
180
200
70
12
Typ.
100
70
8.5
380
350
120
30
-11
-40
-150
-150
-0.81
-0.95
-0.82
190
42
14
23
240
30
Max.
-20
-20
-10
560
-20
-60
-230
-200
-0.88
-1.05
-0.92
Unit Conditions
V I_C=-100µA
V _IC=-10mA ^(a)
V I_E=-100µA
nA
nA
nA
mV
mV
mV
mV
V
V
V
MHz
pF
ns
V_CE=-40V,
V_BE = 1V
V_CB=-40V
V_EB=-6V
I_C=-10mA, V_CE=-2V^(a)
I_C=-500mA, V_CE=-2V^(a)
Ic=-5A, V_CE=-2V^(a)
Ic=-10A, V_CE=-2V^(a)
I_C=-100mA, I_B=-10mA^(a)
I_C=-1A, I_B=-100mA^(a)
I_C=-2A, I_B=-40mA^(a)
I_C=-5A, I_B=-500mA^(a)
I_C=-2A, I_B=-40mA^(a)
I_C=-5A, I_B=-500mA^(a)
I_C=-5A, V_CE=-2V^(a)
Ic=-500mA, V_CE=-10V,
f=50MHz
V_CB=-10V, f=1MHz
ns V_CC=-12V, I_C=-2.5A,
ns I_B1=I_B2=-125mA
ns
NOTES:
(a) Measured under pulsed conditions. Pulse width=300␮S. Duty cycle Յ2%.
Issue 3 - January 2006
4
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