ZXTP2014Z Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89

ZXTP2014Z
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn on voltage
Static forward current transfer ratio
Transition frequency
BV_CBO
BV_CER
BV_CEO
BV_EBO
I_CBO
I_CER
RՅ1k⍀
I_EBO
V_CE(SAT)
V_BE(SAT)
V_BE(ON)
h_FE
f_T
-180
-180
-140
-7.0
100
100
45
-200
-200
-160
-8.0
Ͻ1
Ͻ1
Ͻ1
-37
-50
-80
-255
-910
-800
225
200
100
5
120
-20
-0.5
-20
-0.5
-10
-60
-75
-115
-330
-1010
-900
300
V I_C = -100␮A
V I_C = -1␮A, RB Յ 1k⍀
V I_C = -10mA*
V I_E = -100␮A
nA V_CB = -150V
␮A V_CB = -150V, T_amb=100ЊC
nA V_CB = -150V
␮A V_CB = -150V, T_amb=100ЊC
nA V_EB = -6V
mV I_C = -0.1A, I_B = -5mA*
mV I_C = -0.5A, I_B = -50mA*
mV I_C = -1A, I_B = -100mA*
mV I_C = -3A, I_B = -300mA*
mV I_C = -3A, I_B = -300mA*
mV I_C = -3A, V_CE = -5V*
I_C = -10mA, V_CE = -5V*
I_C = -1A, V_CE = -5V*
I_C = -3A, V_CE = -5V*
I_C = -10A, V_CE = -5V*
MHz I_C = -100mA, V_CE = -10V
f=50MHz
Output capacitance
Switching times
C_OBO
t_ON
t_OFF
33
pF V_CB = -10V, f= 1MHz*
42
ns I_C = -1A, V_CC = -50V,
636
I_B1 = -I_B2 = -100mA
* Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ 2%.
ISSUE 2 - AUGUST 2005
SEMICONDUCTORS
4