ZXTP2014G_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223

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Diodes Incorporated
ZXTP2014G
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 11)
Collector-Emitter Breakdown Voltage (Note 11)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Symbol
BVCBO
BVCER
BVCEO
BVEBO
ICBO
Min
-180
-180
-140
-7
-
-
Collector Cut-Off Current
ICER
-
R ≤1kΩ
-
Emitter Cut-Off Current
IEBO
-
100
DC Current Transfer Static Ratio (Note 11)
100
hFE
45
-
-
-
Collector-Emitter Saturation Voltage (Note 11)
VCE(sat)
-
-
Base-Emitter Saturation Voltage (Note 11)
Base-Emitter Turn-On Voltage (Note 11)
VBE(sat)
-
VBE(on)
-
Transitional Frequency
fT
-
Output Capacitance
Switching Time
Cobo
-
tON
-
tOFF
-
Note:
11. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
Typ.
-200
-200
-160
-8.3
< -1
-
< -1
-
< -1
225
200
100
5
-40
-55
-85
-275
-940
-830
120
33
42
636
Max
-
-
-
-
-20
-500
-20
-500
-10
-
300
-
-
-60
-80
-120
-360
-1,040
-930
-
-
-
-
Unit
V
V
V
V
nA
nA
nA
nA
nA
-
mV
mV
mV
MHz
pF
ns
Test Condition
IC = -100µA
IC = -1µA, RB ≤ 1kΩ
IC = -1mA
IE = -100µA
VCB = -150V
VCB = -150V, TA = +100°C
VCB = -150V
VCB = -150V, TA = +100°C
VEB = -6V
IC = -10mA, VCE = -5V
IC = -1A, VCE = -5V
IC = -3A, VCE = -5V
IC = -10A, VCE = -5V
IC = -100mA, IB = -5mA
IC = -0.5A, IB = -50mA
IC = -1A, IB = -100mA
IC = -3A, IB = -300mA
IC = -3A, IB = -300mA
IC = -3A, VCE = -5V
IC = -100mA, VCE = -10V,
f = 50MHz
VCB = -10V, f = 1MHz
VCC = -50V, IC = -1A,
IB1 = -IB2 = -100mA
ZXTP2014G
Datasheet Number: DS33716 Rev. 3 - 2
4 of 7
www.diodes.com
May 2015
© Diodes Incorporated