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ZXTP2014G Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 | |||
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ZXTP2014G
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
Transition frequency
BVCBO
BVCER
BVCEO
BVEBO
ICBO
ICER
RÕ
1kâ
IEBO
VCE(SAT)
VBE(SAT)
VBE(ON)
HFE
fT
-180
-180
-140
-7.0
100
100
45
-200
-200
-160
-8.0
Ͻ1
Ͻ1
Ͻ1
-40
-55
-85
-275
-940
-830
225
200
100
5
120
-20
-0.5
-20
-0.5
-10
-60
-80
-120
-360
-1040
-930
300
V IC=-100â®A
V IC=-1â®A, RBÕ
1kâ
V IC=-10mA*
V IE=-100â®A
nA VCB=-150V
â®A VCB=-150V, Tamb=100ÐC
nA VCB=-150V
â®A VCB=-150V, Tamb=100ÐC
nA VEB=-6V
mV IC=-0.1A, IB=-5mA*
mV IC=-0.5A, IB=-50mA*
mV IC=-1A, IB=-100mA*
mV IC=-3A, IB=-300mA*
mV IC=-3A, IB=-300mA*
mV IC=-3A, VCE=-5V*
IC=-10mA, VCE=-5V*
IC=-1A, VCE=-5V*
IC=-3A, VCE=-5V*
IC=-10A, VCE=-5V*
MHz IC=-100mA, VCE=-10V
f=50MHz
Output capacitance
Switching times
COBO
tON
tOFF
33
pF VCB=-10V, f=1MHz*
42
ns IC=-1A, VCC=-50V,
636
IB1= -IB2=-100mA
* Measured under pulsed conditions. Pulse width Õ
300â®s; duty cycle Õ
2%.
ISSUE 1 - JUNE 2005
4
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