ZXTP2013G Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223

ZXTP2013G
ELECTRICAL CHARACTERISTICS (at T_amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
Transition frequency
BV_CBO
BV_CER
BV_CEO
BV_EBO
I_CBO
I_CER
R Յ 1k⍀
I_EBO
V_CE(SAT)
V_BE(SAT)
V_BE(ON)
H_FE
f_T
-140
-140
-100
-7
100
100
25
15
-160
-160
-115
-8.1
Ͻ1
Ͻ1
Ͻ1
-20
-70
-120
-240
-985
-920
250
200
50
30
5
125
-20
-0.5
-20
-0.5
-10
-30
-90
-150
-340
-1100
-1050
300
V I_C=-100␮A
V I_C=-1␮A, RBՅ1k⍀
V I_C=-10mA*
V I_E=-100␮A
nA V_CB=-100V
␮A V_CB=-100V,T_amb=100ЊC
nA V_CB=-100V
␮A V_CB=-100V,T_amb=100ЊC
nA V_EB=-6V
mV I_C=-0.1A, I_B=-10mA*
mV I_C=-1A, I_B=-100mA*
mV I_C=-2A, I_B=-200mA*
mV I_C=-4A, I_B=-400mA*
mV I_C=-4A, I_B=-400mA*
mV I_C=-4A, V_CE=-2V*
I_C=-10mA, V_CE=-1V*
I_C=-1A, V_CE=-1V*
I_C=-3A, V_CE=-1V*
I_C=-4A, V_CE=-1V*
I_C=-10A, V_CE=-1V*
MHz I_C=-100mA, V_CE=-10V
f=50MHz
Output capacitance
Switching times
C_OBO
t_ON
t_OFF
42
pF V_CB=-10V, f=1MHz*
42
ns I_C=-1A, V_CC=-10V,
540
I_B1=I_B2=-100mA
* Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ2%.
SEMICONDUCTORS
4
ISSUE 1 - JUNE 2005