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| ZXTP2012A_15 Datasheet, PDF (4/6 Pages) Diodes Incorporated – 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE | |||
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ZXTP2012A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
Transition frequency
BVCBO
BVCER
BVCEO
BVEBO
ICBO
ICER
RÕ
1kâ
IEBO
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
fT
-100
-100
-60
-7
100
100
65
10
-120
-120
-80
-8.1
Ͻ1
Ͻ1
Ͻ1
-14
-50
-80
-145
-960
-850
250
200
120
25
120
-20
-0.5
-20
-0.5
-10
-20
-65
-115
-210
-1060
-960
300
V IC=-100â®A
V IC=-1â®A, RBÕ
1kâ
V IC=-10mA*
V IE=-100â®A
nA VCB=-80V
â®A VCB=-80V, Tamb=100ÐC
nA VCB=-80V
â®A VCB=-80V, Tamb=100ÐC
nA VEB=-6V
mV IC=-0.1A, IB=-10mA*
mV IC=-1A, IB=-100mA*
mV IC=-2A, IB=-200mA*
mV IC=-4A, IB=-400mA*
mV IC=-4A, IB=-400mA*
mV IC=-4A, VCE=-1V*
IC=-10mA, VCE=-1V*
IC=-1A, VCE=-1V*
IC=-4A, VCE=-1V*
IC=-10A, VCE=-1V*
MHz IC=-100mA, VCE=-10V
f=50MHz
Output capacitance
Switching times
COBO
tON
tOFF
48
pF VCB=-10V, f=1MHz*
39
ns IC=-1A, VCC=-10V,
370
IB1=IB2=-100mA
* Measured under pulsed conditions. Pulse width Õ
300â®s; duty cycle Õ
2%.
SEMICONDUCTORS
ISSUE 2 - NOVEMBER 2005
4
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